Current source self-biasing circuit and method
First Claim
Patent Images
1. A current source self-biasing circuit, comprising:
- a current mirror circuit configured to sense a first current being presented at a first node and provide a second current to a second node;
a current controlling transistor having a current carrying terminal coupled to the first node and configured to modify current in response to a gating voltage;
a first resistive load coupled to receive current passed drain-to-source through the current controlling transistor, the first resistive load coupled to a third node; and
a second resistive load configured to receive the second current, the second resistive load comprising a nonlinear current density device, the nonlinear current density device having a gate and a source region, the gate and source region being separated by a dielectric capable of conducting a tunneling current, the source region being coupled to the third node, the gate coupled to the second node in order to receive the second current, a drain region of the nonlinear current density device being coupled to the source region via the third node.
1 Assignment
0 Petitions
Accused Products
Abstract
Method and apparatus for a nonlinear current circuit element are described, and method and apparatus using the nonlinear current circuit element in current-source self-biasing circuits are described. In one embodiment, a transistor is provided having source and drain terminals coupled together. This transistor has a significant gate tunneling current used beneficially to provide a nonlinear current circuit element. This nonlinear current circuit element is used in a plurality of current-source self-biasing circuits.
23 Citations
20 Claims
-
1. A current source self-biasing circuit, comprising:
-
a current mirror circuit configured to sense a first current being presented at a first node and provide a second current to a second node;
a current controlling transistor having a current carrying terminal coupled to the first node and configured to modify current in response to a gating voltage;
a first resistive load coupled to receive current passed drain-to-source through the current controlling transistor, the first resistive load coupled to a third node; and
a second resistive load configured to receive the second current, the second resistive load comprising a nonlinear current density device, the nonlinear current density device having a gate and a source region, the gate and source region being separated by a dielectric capable of conducting a tunneling current, the source region being coupled to the third node, the gate coupled to the second node in order to receive the second current, a drain region of the nonlinear current density device being coupled to the source region via the third node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method of providing a current source self-biasing circuit, comprising:
-
providing a current mirror circuit coupled to sense a first current and provide a second current;
gating the first current sensed to a first resistive load; and
providing at least a portion of the second current to a second resistive load, the second resistive load provided with a transistor, the transistor having a gate, a drain region, and a source region, the transistor having a gate insulator of limited thickness for providing passage of leakage current from the gate to the source region, the gate receiving the portion of the second current to the second resistive load, the drain region and the source region electrically coupled to one another without having to induce any channel therebetween. - View Dependent Claims (13, 14, 15)
-
-
16. A current source self-biasing circuit, comprising:
-
a current mirror circuit configured to sense a first current being presented at a first node and provide a second current to a second node;
a current controlling transistor having a current carrying terminal coupled to the first node and configured to modify current in response to a gating voltage;
a first resistive load coupled to receive current passed drain-to-source through the current controlling transistor, the first resistive load coupled to a third node; and
a second resistive load configured to receive the second current, the second resistive load comprising a nonlinear current density device, the nonlinear current density device having a gate and a source region, the gate and source region being separated by a dielectric capable of conducting a tunneling current, the source region being coupled to the third node;
the gate and source region of the nonlinear current density device respectively being the gate and source region of a transistor, the dielectric capable of conducting the tunneling current being a gate dielectric of the transistor, the source region of the transistor including spaced apart source and drain regions of the transistor connected to one another at the third node.
-
-
17. A method of providing a current source self-biasing circuit, comprising:
-
providing a current mirror circuit coupled to sense a first current and provide a second current;
gating the first current sensed to a first resistive load; and
providing at least a portion of the second current to a second resistive load, the second resistive load provided with a transistor, the transistor having a gate and a source region, the transistor having a gate insulator of limited thickness for providing passage of leakage current from the gate to the source region;
the transistor including a drain region, the drain region and the source region being connected to one another.
-
-
18. A current source self-biasing circuit, comprising:
-
a current mirror circuit configured to sense a first current being presented at a first node and provide a second current to a second node;
a current controlling transistor having a current carrying terminal coupled to the first node and configured to modify current in response to a gating voltage;
a first resistive load coupled to receive current passed through the current controlling transistor, the first resistive load coupled to a third node; and
a second resistive load configured to receive the second current, the second resistive load provide with a nonlinear current density device, the nonlinear current density device having a gate and a source region, the gate and the source region being separated by a dielectric capable of conducting a tunneling current, the source region being coupled to the third node, the gate being coupled to the second node, the non-linear current density device being a two-terminal device having one less terminal than a transistor. - View Dependent Claims (19, 20)
-
Specification