Method of forming a trench transistor having a superior gate dielectric

• US 6,927,134 B2
• Filed: 02/14/2002
• Issued: 08/09/2005
• Est. Priority Date: 04/05/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Mo, Brian Sze-Ki, Chau, Duc
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): Huynh, Yennhu B.
• Application Number:
  US10/077,258
• Publication Number:
  US 20020100932A1
• Time in Patent Office: 1,272 Days
• Field of Search: 438/241, 438270-272, 438719-724, 438/743, 438/300, 438/133, 438/760, 438/750, 438/744, 257324-326, 257330-334
• US Class Current: 438/270
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/28211 in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer H01L21/28194 and H01L21/28202 take precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench transistor with lower leakage current and higher gate rupture voltage. The gate oxide layer of a trench transistor is grown at a temperature above about 1100° C. to reduce thinning of the oxide layer at the corners of the trench. In a further embodiment, a conformal layer of silicon nitride is deposited over the high-temperature oxide layer, and a second oxide layer is formed between the silicon nitride layer and the gate polysilicon. The first gate oxide layer, silicon nitride layer, and second oxide layer form a composite gate dielectric structure that substantially reduces leakage current in trench field effect transistors.

Claims

1. A method of forming a trench field-effect transistor, the method comprising the steps of:

forming a trench in silicon on a substrate;

forming a gate dielectric layer inside the trench, comprising the steps of;

heating the substrate to at least about 1,100°

C. to form a first layer of silicon oxide at least about 100 Å

thick inside the trench; and

forming a layer of silicon nitride on the first layer of silicon oxide.

2. The method of claim 1 wherein the gate dielectric layer forming step further comprises the step of:

forming a second layer of oxide on the layer of silicon nitride.

3. The method of claim 2 wherein the second layer of oxide is about 50 Å

thick.

4. The method of claim 2 further comprising the step of:

forming a conductive gate material on the second layer of oxide, the conductive gate material substantially filling the trench.

5. The method of claim 1 wherein the layer of silicon nitride is about 120 Å

thick.

6. The method of claim 1 wherein the layer of silicon nitride is a conformal layer of silicon nitride formed using a low-pressure chemical-vapor deposition process.

7. The method of claim 1 further comprising:

forming a body layer on the substrate, the body layer being of opposite conductivity type to that of the substrate, wherein the trench extends through the body layer and into the substrate.

8. A method of forming trench field-effect transistor, the method comprising:

forming a trench in silicon on a substrate;

forming a gate dielectric layer inside the trench, comprising the steps of;

heating the substrate to at least about 1,100°

C. to form a first layer of silicon oxide at least about 100 Å

thick in the trench;

forming a conformal layer of silicon nitride about 120 Å

thick on the layer of silicon oxide by a low-pressure chemical-vapor deposition process;

growing a second layer of oxide about 50 Å

thick on the layer of silicon nitride; and

forming a conductive gate material on the second layer of oxide.

9. The method of claim 8 further comprising the step of:

forming a body layer on the substrate, the body layer being of opposite conductivity type to that of the substrate, wherein the trench extends through the body layer and into the substrate.