Nitrogen-free dielectric anti-reflective coating and hardmask
First Claim
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1. A method for processing a substrate, comprising:
- depositing a first anti-reflective layer; and
depositing a second anti-reflective layer on the first anti-reflective layer by a process comprising;
introducing a processing gas comprising a compound comprising an oxygen-free silane-based compound and an oxygen and carbon containing compound to the processing chamber; and
reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate, wherein the nitrogen-free dielectric material comprises at least silicon and oxygen.
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Abstract
Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
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Citations
20 Claims
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1. A method for processing a substrate, comprising:
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depositing a first anti-reflective layer; and
depositing a second anti-reflective layer on the first anti-reflective layer by a process comprising;
introducing a processing gas comprising a compound comprising an oxygen-free silane-based compound and an oxygen and carbon containing compound to the processing chamber; and
reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate, wherein the nitrogen-free dielectric material comprises at least silicon and oxygen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification