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Semiconductor device including band-engineered superlattice

  • US 6,927,413 B2
  • Filed: 11/19/2003
  • Issued: 08/09/2005
  • Est. Priority Date: 06/26/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a superlattice comprising a plurality of stacked groups of layers;

    each group of layers of said superlattice comprising four stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon;

    said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

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