Semiconductor device including band-engineered superlattice
First Claim
1. A semiconductor device comprising:
- a superlattice comprising a plurality of stacked groups of layers;
each group of layers of said superlattice comprising four stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon;
said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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Accused Products
Abstract
A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Accordingly, the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise be present.
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Citations
26 Claims
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1. A semiconductor device comprising:
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a superlattice comprising a plurality of stacked groups of layers;
each group of layers of said superlattice comprising four stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon;
said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a superlattice comprising a plurality of stacked groups of layers;
each group of layers of said superlattice comprising four stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
said energy-band modifying layer comprising at least one oxygen monolayer constrained within a crystal lattice of adjacent base semiconductor portions. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification