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Vertically integrated photosensor for CMOS imagers

  • US 6,927,432 B2
  • Filed: 08/13/2003
  • Issued: 08/09/2005
  • Est. Priority Date: 08/13/2003
  • Status: Active Grant
First Claim
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1. A electronic imaging component, said component comprising:

  • an electronics layer;

    a monocrystalline photosensing element, said photosensing element fabricated in a vertically integrated optically active layer and bonded to said electronics layer;

    a substantially vertical interconnect coupled to said electronics layer; and

    said monocrystalline photosensing element further comprising a junction surrounding and at least partially encompassing said vertical interconnect, wherein charge carriers may be substantially laterally drawn toward the axis of said vertical interconnect, said junction including one of a p-type and an n-type material having a first side adjacent said vertical interconnect and the other of the one of a p-type and an n-type material adjacent a second side opposed to said first side and positioned horizontally from said first side.

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