Vertically integrated photosensor for CMOS imagers
First Claim
1. A electronic imaging component, said component comprising:
- an electronics layer;
a monocrystalline photosensing element, said photosensing element fabricated in a vertically integrated optically active layer and bonded to said electronics layer;
a substantially vertical interconnect coupled to said electronics layer; and
said monocrystalline photosensing element further comprising a junction surrounding and at least partially encompassing said vertical interconnect, wherein charge carriers may be substantially laterally drawn toward the axis of said vertical interconnect, said junction including one of a p-type and an n-type material having a first side adjacent said vertical interconnect and the other of the one of a p-type and an n-type material adjacent a second side opposed to said first side and positioned horizontally from said first side.
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Abstract
An exemplary system and method for providing a vertically integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS layer (420); and a photosensing element (380) fabricated in a vertically integrated optically active layer (320, 350), where the optically active layer (320, 350) is bonded to the CMOS layer (420) and the optically active layer (320, 350) is positioned near a metalization surface (405) of the CMOS layer (420). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated photosensing components that may be readily incorporated with existing technologies for the improvement of CMOS imaging, device package form factors, weights and/or other manufacturing, device or material performance metrics.
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Citations
20 Claims
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1. A electronic imaging component, said component comprising:
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an electronics layer;
a monocrystalline photosensing element, said photosensing element fabricated in a vertically integrated optically active layer and bonded to said electronics layer;
a substantially vertical interconnect coupled to said electronics layer; and
said monocrystalline photosensing element further comprising a junction surrounding and at least partially encompassing said vertical interconnect, wherein charge carriers may be substantially laterally drawn toward the axis of said vertical interconnect, said junction including one of a p-type and an n-type material having a first side adjacent said vertical interconnect and the other of the one of a p-type and an n-type material adjacent a second side opposed to said first side and positioned horizontally from said first side. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An electronic imaging component array, said component array comprising:
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an electronics array layer;
a monocrystalline photosensing element array, said monocrystalline photosensing element array fabricated in a vertically integrated optically active layer and bonded to said electronics array layer;
a plurality of substantially vertical interconnects coupled to said electronic layer; and
said monocrystalline photosensing element array further comprising a plurality of junctions substantially surrounding and at least partially encompassing said plurality of vertical interconnects, wherein charge carriers may be substantially laterally drawn toward the axes of at least one of said plurality of junctions and said plurality of interconnects, said junctions including one of a p-type and an n-type material having a first side adjacent said vertical interconnect and the other of the one of a p-type and an n-type material adjacent a second side opposed to said first side and positioned horizontally from said first side. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A electronic imaging component array, said component array comprising:
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a plurality of electronics array layers;
a plurality of monocrystalline photosensing element arrays, said monocrystalline photosensing element arrays fabricated in a plurality of vertically integrated optically active layers and bonded to said electronics layers;
a plurality of substantially vertical interconnects coupled to said electronics array layers; and
said monocrystalline photosensing element arrays further comprising a plurality of junctions substantially surrounding and at least partially encompassing said plurality of vertical interconnects, wherein charge carriers may be substantially laterally drawn to the axes of at least one of said plurality of junction, and said plurality of vertical interconnects, said junctions including one of a p-type and an n-type material having a first side adjacent said vertical interconnect and the other of the one of a p-type and an n-type material adjacent a second side opposed to said first side and positioned horizontally from said first side. - View Dependent Claims (19, 20)
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Specification