Organic electroluminescent device including transparent conductive layer and fabricating method thereof

• US 6,927,535 B2
• Filed: 12/30/2002
• Issued: 08/09/2005
• Est. Priority Date: 03/15/2002
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Lee, Kwang-Yeon, Choi, Nack-Bong
• Primary Examiner(s): WILLIAMS, JOSEPH L
• Application Number:
  US10/330,298
• Publication Number:
  US 20030173894A1
• Time in Patent Office: 953 Days
• Field of Search: 313/504, 313/506, 428/690
• US Class Current: 313/504
• CPC Class Codes: H10K 50/17 Carrier injection layers
• CPC Class Codes: H10K 50/81 Anodes

Abstract

A method of fabricating an electrode for an organic electroluminescent device includes forming a transparent conductive layer on a substrate, doping the transparent conductive layer with impurities, and annealing the doped transparent conductive layer.

Claims

1. An organic electroluminescent device, comprising:

a substrate;

a first electrode of a transparent conductive material including impurities on the substrate;

a plurality of organic electroluminescent layers, the plurality of organic electroluminescent layers includes a first organic electroluminescent layer and a second organic electroluminescent layer, and the first organic electroluminescent layer is coupled to the first electrode; and

a second electrode coupled to the second organic electroluminescent layer.

2. The device according to claim 1, wherein the first organic electroluminescent layer includes a hole injection layer.

3. The device according to claim 2, wherein the first electrode includes at least one of indium-tin-oxide and indium-zinc-oxide.

4. The device according to claim 3, wherein the hole injection layer has a work function between about 5.2 eV and about 5.3 eV, and the first electrode has a work function greater than about 4.84 eV.

5. The device according to claim 3, wherein the first electrode is formed by doping a transparent conductive layer with impurities between about 5×

10¹⁴ ions/cm² and about 3×

10¹⁵ ions/cm² at an acceleration voltage of about 30 kV.

6. The device according to claim 5, wherein the impurities are positive type (p-type) impurities.

7. The device according to claim 6, wherein the impurities are compounds including boron impurities.

8. The device according to claim 5, wherein the impurities are negative type (n-type) impurities.

9. The device according to claim 8, wherein the impurities are compounds including phosphorous impurities.

10. The device according to claim 3, wherein the first electrode is formed by annealing a doped transparent conductive layer at a temperature between about 230°

C. and about 400°

C. for a time period between about 30 minutes to about 2 hours.

11. The device according to claim 3, wherein the first electrode is formed by annealing a doped transparent conductive layer at a temperature of about 400°

C. for about 30 minutes.