Write driver circuit in phase change memory device and method for applying write current

• US 6,928,022 B2
• Filed: 10/20/2004
• Issued: 08/09/2005
• Est. Priority Date: 11/27/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kwak, Choong-Keun, Cho, Beak-Hyung
• Primary Examiner(s): Tran, Andrew Q.
• Application Number:
  US10/969,697
• Publication Number:
  US 20050117388A1
• Time in Patent Office: 293 Days
• Field of Search: 365/148, 365/225.7, 365/211, 365/212
• US Class Current: 365/225.7
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0038 Power supply circuits
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0078 Write using current through the cell
• CPC Class Codes: G11C 2029/5006 Current
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: G11C 29/02 Detection or location of defective auxiliary circuits, e.g. defective refresh counters
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters

Abstract

A write driver circuit including a plurality of programmable fuses for a phase change memory device in which a write operation is correctly performed even in the case where a current output shift in a write current generation circuit; or in the case where a phase change memory cell having a phase change property shift due to an external factor or due a process change. The write driver circuit includes a write current control unit for outputting a first or second level of voltage selected, by selecting one of a first or second programmable current path, based on whether a first or second selection pulse signal is applied; and a current driving unit for generating a write current controlled by the output voltage of the write current control unit. Each of the first and second programmable current paths includes fuses that can be programmed to adjust their resistance to adjust the respective selected output voltage to compensate for the current output shift in the write current generation circuit or for the phase change memory cell having the phase change property shift.

Claims

1. A circuit for performing a write operation in a phase change memory device having a phase change memory cell, comprising:

a programmable fuse unit for adjusting the magnitude of write current through the phase change memory cell.

2. The circuit according to claim 1, wherein the programmable fuse unit comprises laser-programmable fuses.

3. The circuit according to claim 1, wherein the programmable fuse unit comprises electrically-programmable fuses.

4. The circuit according to claim 1, wherein the magnitude of a first write current applied to establish a relatively higher resistance state of the phase change memory cell, is higher than the magnitude of a second write current applied to establish a relatively lower resistance state of the phase change memory cell.

5. A write driver circuit for a phase change memory device having a plurality of phase change memory cells each having first and second resistance states, the circuit comprising:

a write current control unit for outputting a first level of voltage by establishing a first programmable current path while a first selection pulse signal is applied, and outputting a second level of voltage by establishing a second programmable current path while a second selection pulse signal is applied.

6. The circuit of claim 5, wherein at least one of the first programmable current path and the second programmable current path comprises a programmable fuse.

7. The circuit of claim 5, wherein at least one of the first programmable current path and the second programmable current path includes a transistor having a source-to-drain resistance that is controlled by the conducting state of at least one programmable fuse.

8. The circuit of claim 7, wherein the at least one programmable fuse is a laser-programmable fuse.

9. The circuit of claim 5, further comprising:

a pulse selection unit for selecting one of first and second state pulses that are applied to change a resistance state of the phase change memory cell, in response to a logic state of the applied write data, and outputting the selected pulse as a first or second selected pulse signal; and

a current driving unit for generating a write current in response to the output voltage from the write current control unit.

10. The circuit of claim 9, wherein the -pulse selection unit comprises first and second transmission gates for respectively passing one of the first and second state pulses selected based upon received write data.

11. The circuit of claim 5, wherein the write current control unit comprises:

a reset current control unit for establishing the first programmable current path that includes at least one programmable fuse in response to the first selection pulse signal and;

a set current control unit for establishing the second programmable current path that includes at least one programmable fuse in response to the second selection pulse signal and allowing current flowing through the second current path to be decreased by the programmable fuse; and

an output voltage control unit that includes at least one programmable fuse, for outputting the first or second level of the voltage through a voltage output node.

12. The circuit of claim 11, further comprising a current driving unit for generating a write current in response to the output voltage from the write current control unit that includes a P-type switch having a gate terminal connected to the voltage output node of the output voltage control unit, a source terminal to receive a power supply voltage, and a drain terminal to output the write current.

13. A write driver circuit for performing a write operation in a phase change memory device having a plurality of phase change memory cells having first and second resistance states, the circuit comprising:

a write current control unit for outputting a first level of voltage by establishing a first programmable current path if a first selection pulse signal is applied, and outputting a second level of voltage by establishing a second programmable current path if a second selection-pulse signal is applied.

14. The circuit of claim 13, wherein at least one of the first programmable current path and the second programmable current path includes a programmable fuse adapted to change the resistance of one of the first programmable current path and the second programmable current path.

15. The circuit of claim 14, wherein at least one programmable fuse is adapted to change the resistance of one of the first programmable current path and the second programmable current path to compensate for a current output shift or for a phase change property shift of the phase change memory cell.

16. The circuit of claim 13, further comprising:

a pulse selection unit for selecting one of first and second state pulses that are applied to change a resistance state of the phase change memory cell, in response to a logic state of the applied write data, and outputting the selected pulse as a first or second selected pulse signal; and

a current driving unit for generating a write current in response to the output voltage of the write current control unit.

17. The circuit of claim 16, wherein the pulse selection unit comprises first and second transmission gates that selectively pass the first and second state pulses based upon write data received at their respective control terminals.

18. The circuit of claim 16, wherein the write current control unit comprises:

a reset current control unit for establishing the first programmable current path in response to the first selection pulse signal;

a set current control unit for establishing the second programmable current path in response to the second selection pulse signal; and

an output voltage control unit having a voltage output node connected to the first and second current paths that outputs the first and second levels of voltage depending on the quantity of current flowing through the selected one first and second current paths.

19. The circuit of claim 18, wherein the first programmable current path includes at least one programmable fuse adapted to enable a change of the resistance of the first programmable current path;

and

the second programmable current path includes at least one programmable fuse adapted to enable a change of the resistance of the second programmable current path.

20. The circuit of claim 19, wherein the current driving unit is composed of a P-type switch having a gate terminal connected to the voltage output node of the output voltage control unit, a source terminal connected to a power supply voltage, and a drain terminal to output the write current.

21. A write driver circuit for a phase change memory device having an array of phase change memory cells having first and second resistance states, the circuit comprising:

a pulse selection unit for selecting one of first and second state pulses that are applied to change the resistance state of a phase change memory cell based upon the logic state of applied write data, and for outputting the selected pulse as a first or second selected pulse signal;

a write current control unit for outputting a first level of voltage by establishing a first current path having a first programmable resistance, and outputting a second level of voltage by establishing a second current path having a second programmable resistance if the second selection pulse signal is applied; and

a current driving unit for generating a write current in response to the output voltage of the write current control unit.

22. The circuit of claim 21, wherein the pulse selection unit comprises first and second transmission gates that selectively pass the first and second state pulses based upon the applied write data received at their control terminals.

23. The circuit of claim 22, wherein the write current control unit comprises:

a reset current control unit for establishing the first current path in response to the first selection pulse signal, the resistance of the first current path being changeable using at least one programmable fuse;

a set current control unit for establishing the second current path in response to the second selection pulse signal and the resistance of the second current path being changeable using at least one programmable fuse; and

an output voltage control unit having a voltage output node connected to the first and second current paths, and outputting a selected one of the first and second level of voltages through the voltage output node, the actual voltage of selected one of the first and second level of voltages depending on the quantity of current flowing through the first or second current paths.

24. The circuit of claim 23, wherein the current driving unit is composed of a P-type transistor having a gate terminal connected to the voltage output node of the output voltage control unit.

25. The circuit of claim 24, wherein the resistance of the first current path changes in response to an output voltage of a first DC output circuit that includes at least one programmable fuse for controlling the voltage of the output voltage.

26. The circuit of claim 25, wherein the resistance of the second current path changes in response to an output voltage of a second DC output circuit that includes at least one programmable fuse for controlling the voltage of the output voltage.

27. A method for applying write currents to a phase change memory cell in a phase change memory device, the method comprising the step of:

adjusting the magnitude of a first write current determined by a first logic state of write data by programming a first fuse.

28. The method of claim 27, wherein the first fuse is a laser-programmable fuse.

29. The method of claim 27, wherein the first write current is a set current for crystallizing a phase change material in the phase change memory cell.

30. The method of claim 29, further comprising the step of adjusting the magnitude of a second write current determined by a second logic state of write data by programming a second fuse.

31. The method of claim 30, wherein the second fuse is a laser-programmable fuse.

32. The method of claim 31, wherein the second write current is a reset current for amorphizing the phase change material in the phase change memory cell.

33. The method of claim 30, wherein the first logic state is a logic “

0” and

the second logic state is a logic “

1”

.