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Episeal pressure sensor and method for making an episeal pressure sensor

  • US 6,928,879 B2
  • Filed: 02/26/2003
  • Issued: 08/16/2005
  • Est. Priority Date: 02/26/2003
  • Status: Expired due to Term
First Claim
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1. A method for making a pressure sensor, comprising:

  • providing a wafer including at least a base silicon layer, a buried sacrificial layer, and a top silicon layer, the top silicon layer arranged over the buried sacrificial layer, the buried sacrificial layer arranged over the base silicon layer;

    etching at least one vent through the top silicon layer to the buried sacrificial layer;

    removing at least a portion of the buried sacrificial layer to form a cavity;

    depositing a sealing silicon bearing compound to seal the at least one vent; and

    arranging a sensing element on the wafer;

    wherein the etching of the at least one vent includes etching at least one tapered vent, the at least one tapered vent having a first cross section towards a top of the top silicon layer and a second cross section towards the buried sacrificial layer, a first width of the first cross section being greater than a second width of the second cross section, the first width being parallel to the second width.

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