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Method of reducing pattern distortions during imprint lithography processes

  • US 6,929,762 B2
  • Filed: 11/13/2002
  • Issued: 08/16/2005
  • Est. Priority Date: 11/13/2002
  • Status: Expired due to Term
First Claim
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1. A method of reducing distortions in a pattern disposed on a layer of a substrate, defining a recorded pattern, employing a mold having features to form said pattern on said layer, defining an original pattern, said method comprising:

  • defining a region on said layer in which to produce said recorded pattern;

    creating relative extenuative variations between said substrate and said mold by varying a temperature of one of said substrate and said mold so that an area defined by said original pattern differs from said area defined by said region; and

    applying mechanical stresses to said mold to varying said area associated with said original pattern to be coextensive with said area defined by said region.

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