Dual frequency band inverted-F antenna

• US 6,930,640 B2
• Filed: 11/28/2003
• Issued: 08/16/2005
• Est. Priority Date: 03/28/2003
• Status: Active Grant

• Current Assignee: Gemtek Technology Company Limited
• Original Assignee: Gemtek Technology Company Limited
• Inventors: Hsiao, Jason, Lee, Ming-Chou, Chung, Shyh-Jong
• Primary Examiner(s): Ho, Tan
• Application Number:
  US10/722,539
• Publication Number:
  US 20040189530A1
• Time in Patent Office: 627 Days
• Field of Search: 343/700.MS, 343/702, 343/895
• US Class Current: 343/700.0MS
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 5/357 using a single feed point
• CPC Class Codes: H01Q 9/42 with folded element, the folded parts being spaced apart a small fraction of the operating wavelength

Abstract

A dual frequency band inverted-F antenna used for communicating a low frequency signal and a high frequency signal includes a substrate, a ground metal, a vortical metal structure, a short circuit leg, a feeding leg, and a terminal micro strip. The ground metal and the terminal micro strip are formed on the lower surface of the substrate. The vortical metal structure, formed on the upper surface of the substrate, further has a short circuit end and an open circuit end. The short circuit leg connects electrically the short circuit end of the vortical metal structure with the ground metal. The feeding leg extends along a predetermined direction of the vortical metal structure to couple with a feeding circuit on the substrate. The terminal micro strip connects electrically to the open circuit end through a first conductive aperture. By increasing the encircling number of the vortical metal structure, the coupling effect is generated so that the equivalent wavelength of the high frequency signal can be longer, thus the resonance frequency thereof can be reduced, and so a first frequency can be still kept communicating at a lower frequency band and a second frequency can also be added for communicating at a higher frequency band.

Claims

1. A dual frequency band inverted-F antenna for communicating a low frequency signal and a high frequency signal, comprising:

a substrate;

a ground metal, which is formed on a lower surface of said substrate;

a vortical metal structure, which is formed on an upper surface of said substrate, further having a short circuit end and an open circuit end wherein said open circuit end is located within a center of said vortical metal structure;

a short circuit leg, which connects electrically said short circuit end of said vortical metal structure with said ground metal;

a feeding leg, which extends along a predetermined direction of said vortical metal structure to couple with a feeding circuit on said substrate; and

a terminal micro strip, which is fabricated on the lower surface of said substrate and connected electrically to said open circuit end through a first conductive aperture;

wherein, by increasing an encircling number of said vortical metal structure to generate a coupling effect so that an equivalent wavelength of said high frequency signal becomes longer and thereby a resonance frequency at a lower frequency band and a second frequency is added for communicating at a higher frequency band.

2. The dual frequency band inverted-F antenna of claim 1, wherein said ground metal connects electrically to said short circuit leg through a second conductive aperture.

3. The dual frequency band inverted-F antenna of claim 1, wherein said terminal micro strip has a function of adjusting a coupled impedance with said feeding circuit.

4. The dual frequency band inverted-F antenna of claim 1, wherein said ground metal, said vortical metal structure, said short circuit leg, said feeding leg, and said terminal micro strip are printed circuits located on said substrate.

5. The dual frequency band inverted-F antenna of claim 1, wherein the equivalent current path length of said open circuit end and said short circuit end is one quarter of a selected wavelength so as to form an open circuit-short circuit structure.

6. The dual frequency band inverted-F antenna of claim 1, wherein said vortical metal structure generates inductance to form internal impedance and thus increases freedom of adjusting input impedance of said dual frequency band inverted-F antenna.