N-point-converter circuit

• US 6,930,899 B2
• Filed: 10/29/2003
• Issued: 08/16/2005
• Est. Priority Date: 07/02/2001
• Status: Active Grant

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Bakran, Mark-Matthias, Neeser, Martin, Zaiser, Georg
• Primary Examiner(s): STERRETT, JEFFREY L
• Application Number:
  US10/696,008
• Publication Number:
  US 20040095790A1
• Time in Patent Office: 657 Days
• Field of Search: 363/43, 363/132, 363/136, 363/137
• US Class Current: 363/132
• CPC Class Codes: H02M 7/483 Converters with outputs that each can have more than two voltages levels
• CPC Class Codes: H02M 7/487 Neutral point clamped inverters

Abstract

An n-point-converter circuit with two series-connected power converter valves, each having (n−1) turn-off semiconductor switches, is disclosed. The converter circuit has a voltage intermediate circuit with (n−1) electrically series-connected capacitors. The voltage intermediate circuit is connected in parallel to DC-side terminals of the series-connected power converter valves. At least one AC-side terminal can be connected to one or more of the n potentials of the voltage intermediate circuit by means of (n−2) cross arms, each of which includes at least (n−3) turn-off semiconductor switches. The multipoint converter is easy to implement, has an improved output voltage quality, and possesses an emergency running feature.

Claims

1. An n-point-converter circuit, consisting:

a maximum of two converter valves for each converter phase electrically connected in series at corresponding valve connection points, each converter valve having a maximum of (n−

1) turn-off semiconductor switches;

a voltage intermediate circuit having a maximum of (n−

1) capacitors electrically connected in series at corresponding capacitor connection points, each capacitor connection point defining a corresponding DC potential; and

a maximum of (n−

2) cross arms, each cross arm having a maximum of (n−

1) semiconductor switches, of which at least two are anti-serially connected, wherein free ends of the series-connected converter valves form DC-side terminals, said DC-side terminals connected electrically in parallel with the voltage intermediate circuit, and

wherein the (n−

2) cross arms connect the valve connection point of each series-connected pair of the converter valves with a corresponding one of the intermediate potentials of the voltage intermediate circuit capacitor connection points.

2. The circuit of claim 1, wherein the turn-off semiconductor switches of each converter valve and of each cross arm are arranged side-by-side in a corresponding compression assembly in such a way that the valve connection points and the capacitor connection points are each located on a different side of the compression assembly.

3. The circuit of claim 1, wherein the turn-off semiconductor switches comprise Insulated Gate Bipolar Transistors (IGBT).

4. An n-point-converter circuit, consisting:

a maximum of two converter valves for each converter phase electrically connected in series and having free ends forming DC-side terminals, each converter valve having a maximum of (n−

1) turn-off semiconductor switches and a valve connection point;

a voltage intermediate circuit having a maximum of (n−

1) capacitors electrically connected in series at (n−

2) corresponding capacitor connection points and connected electrically in parallel with the DC-side terminals, each capacitor connection point defining a corresponding DC potential; and

a maximum of (n−

2) cross arms having turn-off cross arm semiconductor switches and connecting one of the (n−

2) capacitor connection points with a corresponding one of the valve connection points,

wherein a number of the turn-off cross arm semiconductor switches in a cross arm is selected so that each cross arm that connects a valve connection point with a corresponding intermediate potential of the voltage intermediate circuit capacitor connection points has an identical number of turn-off cross arm semiconductor switches, and at least two of the turn-off cross arm semiconductor switches in a cross arm are anti-serially connected.

5. The circuit of claim 4, wherein the turn-off semiconductor switches of each converter valve and the turn-off semiconductor switches of each cross arm are arranged side-by-side in a corresponding compression assembly in such a way that the valve connection points and the capacitor connection points are each located on a different side of the compression assembly.

6. The circuit of claim 4, wherein the turn-off semiconductor switches comprise Insulated Gate Bipolar Transistors (IGBT).