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Thin-film deposition method

  • US 6,933,009 B2
  • Filed: 05/05/2003
  • Issued: 08/23/2005
  • Est. Priority Date: 12/28/1999
  • Status: Expired due to Fees
First Claim
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1. A thin-film deposition method, comprising:

  • placing a substrate in a heat chamber having a pressure equal to or higher than an atmospheric pressure;

    heating the substrate at least to a deposition temperature in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection;

    transferring the heated substrate from the heat chamber into a load-lock chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a first valve interposed therebetween, in which a temperature-decrease prevention mechanism controls a temperature of the substrate to be equal to or higher than the deposition temperature;

    transferring the heated substrate from the load-lock chamber into a deposition chamber which is a vacuum chamber connected to the load-lock chamber directly or indirectly with a second valve interposed therebetween, and carrying out a thin-film deposition on the substrate in the deposition chamber at the deposition temperature higher than the room temperature.

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