Methods for providing a sub .15 micron magnetic memory structure

• US 6,933,155 B2
• Filed: 05/21/2003
• Issued: 08/23/2005
• Est. Priority Date: 05/21/2003
• Status: Active Grant

• Current Assignee: Samsung Semiconductor Incorporated (Samsung Electronics Co. Ltd.)
• Original Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Inventors: Nguyen, Paul P., Huai, Yiming, Albert, Frank
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US10/443,936
• Publication Number:
  US 20040235201A1
• Time in Patent Office: 825 Days
• Field of Search: 438/3, 438257-259, 257/310, 257/421, 365/158, 365/173
• US Class Current: 438/3
• CPC Class Codes: H10N 50/01 Manufacture or treatment

Abstract

A method for providing a magnetic element is disclosed. The method includes providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method also includes defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish, polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.

Claims

1. A method for providing a magnetic element comprising:

providing at least one magnetic element layer;

providing a hard mask structure for masking a portion of the at least one magnetic element layer, the hard mask being formed from at least one hard mask material, the at least one hard mask material being etchable for definition of the hard mask structure, the hard mask structure acting as a mask during definition of a width of the magnetic element, the hard mask structure being a diamond-like carbon structure;

defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask.

2. The method of claim 1 further comprising:

providing a polishing resistant layer; and

providing an insulator.

3. The method of claim 1 wherein the hard mask structure further acts as a stop layer during a chemical mechanical (CMP) step and wherein the method further includes:

providing an insulator after the width of the magnetic element has been defined; and

performing the CMP step using the hard mask structure as a stop layer above the magnetic element.

4. The method of claim 1 further comprising:

providing a bottom contact under the at least one magnetic element layer.

5. The method of claim 4 wherein the magnetic element is used in conjunction with CMOS circuitry.

6. The method of claim 1 wherein the at least one magnetic layer providing step further includes:

providing a spin tunneling junction having a first free layer;

providing at least one spin valve having a second free layer, the first free layer and the second free layer being magnetostatically coupled.

7. The method of claim 1 wherein the width-defining step further includes:

(c1) defining the width of the magnetic element to be less than or equal to 0.15 micron.

8. A method for providing a magnetic element comprising:

providing at least one magnetic element layer;

providing a hard mask structure for masking a portion of the at least one magnetic element layer, the hard mask being formed from at least one hard mask material, the at least one hard mask material being etchable for definition of the hard mask structure, the hard mask structure acting as a mask during definition of a width of the magnetic element;

defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask; and

wherein the hard mask structure providing step further includes;

providing a hard mask layer on the capping layer, the capping layer residing on a layer of the at least one magnetic element layer, the capping layer being resistant to an etch that defines the hard mask structure;

providing a photoresist structure on the hard mask layer, the photoresist structure having a width;

anisotropically etching the hard mask layer using the photoresist structure as a mask, the hard mask layer having a first width after being anisotropically etched;

trimming the hard mask layer to have a second width that is less than the first width; and

removing the photoresist structure after the hard mask layer has been trimmed.

9. A method for providing a magnetic element comprising:

providing at least one magnetic element layer;

providing a hard mask structure for masking a portion of the at least one magnetic element layer, the hard mask being formed from at least one hard mask material, the at least one hard mask material being etchable for definition of the hard mask structure, the hard mask structure acting as a mask during definition of a width of the magnetic element;

defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask; and

providing a plurality of polishing resistant structures, the plurality of polishing resistant structures having a recessed region therebetween.

10. The method of claim 9 wherein the polishing resistant structure providing step further includes:

providing a polishing resistant layer; and

etching at least one trench in the polishing resistant layer to provide the recessed region.

11. The method of claim 9 wherein the polishing resistant structure providing step further includes:

providing the plurality of polishing resistant posts, the plurality of polishing resistant posts having the recessed region therebetween.

12. The method of claim 9 wherein the plurality of polishing resistant structures include diamond like carbon, Si₃N₄, and/or TaN.

13. A method for providing a magnetic element comprising the steps of:

providing at least one magnetic element layer;

providing a hard mask structure for masking a portion of the at least one magnetic element layer, the hard mask being formed from at least one hard mask material, the at least one hard mask material being etchable for definition of the hard mask structure, the hard mask structure acting as a mask during definition of a width of the magnetic element;

defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask;

wherein at least one magnetic layer providing step further includes;

providing a dual spin tunnel/valve structure;

providing a capping layer on the dual spin tunnel/valve structure.