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Method for improved alignment of magnetic tunnel junction elements

  • US 6,933,204 B2
  • Filed: 10/13/2003
  • Issued: 08/23/2005
  • Est. Priority Date: 10/13/2003
  • Status: Expired due to Term
First Claim
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1. A method for aligning an opaque, active device in a semiconductor structure, the method comprising:

  • forming an opaque layer over an optically transparent layer formed on a lower metallization level, said lower metallization level including one or more alignment marks formed therein; and

    patterning and opening, through topographic alignment, a portion of said opaque layer corresponding to the location of said one or more alignment marks in said lower metallization level so as to render said one or more alignment marks optically visible; and

    patterning said opaque layer with respect to said lower metallization level, using said optically visible one or more alignment marks.

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