Method of cleaning CVD device and cleaning device therefor

• US 6,935,351 B2
• Filed: 03/18/2002
• Issued: 08/30/2005
• Est. Priority Date: 03/22/2001
• Status: Expired due to Term

• Current Assignee: Anelva Corporation (Canon Inc.), Daikin Industries Ltd, Kanto Denka Kogyo Co., Ltd., Kokusai Electric Corp., Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Sony Corporation (Sony Group Corp.), Tokyo Electron Limited, Ulvac Incorporated
• Original Assignee: Anelva Corporation (Canon Inc.), Daikin Industries Ltd, Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.), Kanto Denka Kogyo Co., Ltd., Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation), Sanyo Electric Company Limited (Panasonic Holdings Corporation), NEC Electronics Corporation (Renesas Electronics Corporation), Renesas Technology Corporation (Renesas Electronics Corporation), Sony Corporation (Sony Group Corp.), Tokyo Electron Limited, Ulvac Incorporated
• Inventors: Wani, Etsuo, Murata, Hitoshi, Tsuji, Naoto, Shibata, Koji, Kosano, Yoshihide
• Primary Examiner(s): Kornakov, M.
• Application Number:
  US10/276,305
• Publication Number:
  US 20030079757A1
• Time in Patent Office: 1,261 Days
• Field of Search: 134/1.1, 134/22.1, 134/902, 134/1, 134/31, 134/36, 438/905, 156/345.35, 156/345.47, 156/345.29, 156/345.43, 156/345.44
• US Class Current: 134/22.1
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: Y10S 134/902 Semiconductor wafer
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

A cleaning method for CVD apparatus wherein by-products such as SiO₂ and Si₃N₄ adhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.

Claims

1. A method of cleaning a CVD apparatus wherein a reactive gas is fed into a reaction chamber and a deposited film is formed on a surface of base material disposed in the reaction chamber, said method comprising:

converting a fluorinated cleaning gas containing a fluorocompound to plasma using a remote plasma generator after formation of the deposited film on the base material surface, and

introducing the plasma cleaning gas into the reaction chamber to thereby remove any by-products sticking to inner parts of the reaction chamber,

wherein;

the plasma cleaning gas is directly introduced into the reaction chamber; and

the plasma cleaning gas is introduced into the reaction chamber through a raw-material gas supply path.

2. The cleaning method as claimed in claim 1, wherein a distance between the remote plasma generator and the reaction chamber is in a range of 0 to 200 cm.

3. The cleaning method as claimed in claim 1, wherein the plasma cleaning gas is introduced through a side part of the reaction chamber.

4. The cleaning method as claimed in claim 1, wherein a selective switching is performed between the direct introduction of the plasma cleaning gas into the reaction chamber and the introduction of the plasma cleaning gas into the reaction chamber through the raw gas supply path.

5. The cleaning method as claimed in claim 1, wherein the fluorocompound is at least one member selected from the group consisting of nitrogenous fluorocompounds, oxygen-containing perfluorocarbons and perfluorocarbons having 1 to 6 carbon atoms.

6. The cleaning method as claimed in claim 1, wherein the fluorocompound is a perfluorocarbon having 1 to 6 carbon atoms.

7. The cleaning method as claimed in claim 1, wherein the CVD apparatus is a plasma enhanced CVD apparatus having an upper electrode and a lower electrode both arranged inside a reaction chamber, between which a radiofrequency power is applied to thereby generate plasma, so that a deposited film is formed on a surface of base material disposed on the lower electrode inside the reaction chamber.

8. A cleaning device for a plasma CVD apparatus wherein a reactive gas is fed into a reaction chamber and a deposited film is formed on a surface of base material disposed in the reaction chamber, said cleaning device comprising:

a remote plasma generator capable of converting a fluorinated cleaning gas containing a fluorocompound to plasma after formation of the deposited film on the base material surface; and

a cleaning gas introduction path for introducing the plasma cleaning gas into the reaction chamber,

wherein by-products adhered to inner parts of the reaction chamber are removed by the plasma cleaning gas, and

wherein the cleaning gas introduction path includes a first cleaning gas introduction path for directly introducing the plasma cleaning gas into the reaction chamber, and a second cleaning gas introduction path for introducing the plasma cleaning gas into the reaction chamber through a raw-material gas supply path.

9. The cleaning device as claimed in claim 8, wherein a distance between the remote plasma generator and the reaction chamber is in a range of 0 to 200 cm.

10. The cleaning device as claimed in claim 8, wherein the first cleaning gas introduction path is so constructed that the plasma cleaning gas is introduced through a side part of the reaction chamber.

11. The cleaning device as claimed in claim 8, further comprising a switching controller capable of performing a selective switching between the first cleaning gas introduction path and the second cleaning gas introduction path.

12. The cleaning device as claimed in claim 8, wherein the remote plasma generator is configured to convert to plasma a fluorocompound that includes at least one member selected from the group consisting of nitrogenous fluorocompounds, oxygen-containing perfluorocarbons and perfluorocarbons having 1 to 6 carbon atoms.

13. The cleaning device as claimed in claim 8, wherein the remote plasma generator is configured to convert to plasma a fluorocompound that is a perfluorocarbon having 1 to 6 carbon atoms.

14. The cleaning device as claimed in claim 8, wherein the cleaning device is configured to clean the plasma CVD apparatus having an upper electrode and a lower electrode both arranged inside a reaction chamber, the reaction chamber adapted to generate plasma upon application of a high frequency power between the upper electrode and the lower electrode to thereby form a deposited film on a surface of base material disposed on the lower electrode inside the reaction chamber.