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Metal gate MOS transistors and methods for making the same

  • US 6,936,508 B2
  • Filed: 09/12/2003
  • Issued: 08/30/2005
  • Est. Priority Date: 09/12/2003
  • Status: Active Grant
First Claim
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1. A method of fabricating PMOS and NMOS metal gate structures in a semiconductor device, the method comprising:

  • forming a gate dielectric in PMOS and NMOS regions above a semiconductor body;

    forming a metal nitride above the gate dielectric in the NMOS region;

    forming a metal boride above the gate dielectric in the PMOS region;

    patterning the metal nitride to form an NMOS gate structure in the NMOS region; and

    patterning the metal boride to form a PMOS gate structure in the PMOS region;

    wherein forming the metal boride above the gate dielectric in the PMOS region comprises;

    forming a metal nitride above the gate dielectric in the PMOS region; and

    introducing boron into the metal nitride to form the metal boride in the PMOS region.

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