Semiconductor light-emitting diode
First Claim
1. A light-emitting diode comprising:
- a semiconductor substrate; and
a layered structure comprising an AlGaInP type compound semiconductor material and provided on the semiconductor substrate, wherein the layered structure comprises;
a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and
a current diffusion layer comprising an AlGaInP type material which is lattice-mismatched with the light-emitting structure, wherein a lattice mismatch Δ
a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −
1% or smaller;
Δ
a/a=(ad−
ae)/ae where ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure, andwherein crystal of the semiconductor substrate is inclined by 8°
(degrees) to 20°
(20 degrees) in a 011 direction with respect to a (100) plane thereof.
1 Assignment
0 Petitions
Accused Products
Abstract
A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch Δa/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller:
Δa/a=(ad−ae)/ae
where ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure.
-
Citations
9 Claims
-
1. A light-emitting diode comprising:
-
a semiconductor substrate; and
a layered structure comprising an AlGaInP type compound semiconductor material and provided on the semiconductor substrate, wherein the layered structure comprises;
a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and
a current diffusion layer comprising an AlGaInP type material which is lattice-mismatched with the light-emitting structure, wherein a lattice mismatch Δ
a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −
1% or smaller;
Δ
a/a=(ad−
ae)/aewhere ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure, and wherein crystal of the semiconductor substrate is inclined by 8°
(degrees) to 20°
(20 degrees) in a 011 direction with respect to a (100) plane thereof.- View Dependent Claims (2, 3)
-
-
4. A light-emitting diode comprising:
-
a semiconductor substrate, and a layered structure comprising an AlGaInP type compound semiconductor material and provided on the semiconductor substrate, wherein the layered structure comprises;
a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and
a current diffusion layer comprising an AlGaInP type material which is lattice-mismatched with the light-emitting structure, wherein a lattice mismatch Δ
a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −
1% or smaller;
Δ
a/a=(ad−
ae)aewhere ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure, and wherein a composition of the current diffusion layer is expressed as (AlxGa1−
x)yIn1−
yP, and at least one of a value of x and a value of 1−
y in the composition varies along a thickness direction of the layered structure.- View Dependent Claims (5)
-
-
6. A light-emitting diode comprising
a semiconductor substrate; - and
a layered structure comprising an AlGaInP type compound semiconductor material and provided on the semiconductor substrate, wherein the layered structure comprises;
a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and
a current diffusion layer comprising an AlGaInP type material which is lattice-mismatched with the light-emitting structure, wherein a lattice mismatch Δ
a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −
1% or smaller;
Δ
a/a=(ad−
ae)aewhere ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure, and wherein a composition of the current diffusion layer is expressed as (AlxGa1−
x)yIn1−
yP, and at least one of a value of x and a value of 1−
y in the composition decreases in a step-like manner along a thickness direction of the layered structure from an interface with the light-emitting structure toward opposite end of the current diffusion layer.- View Dependent Claims (7)
- and
-
8. A light-emitting diode comprising:
-
a semiconductor substrate; and
a layered structure comprising an AlGaInP type compound semiconductor material and provided on the semiconductor substrate, wherein the layered structure comprises;
a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and
a current diffusion layer comprising an AlGaInP type material which is lattice-mismatched with the light-emitting structure, wherein a lattice mismatch Δ
a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −
1% or smaller;
Δ
a/a=(ad−
ae)/aewhere ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure, and wherein a composition of the current diffusion layer is expressed as (AlxGa1−
x)yIn1−
yP, and at least one of a value of x and a value of 1−
y in the composition varies in a step-like manner along a thickness direction of the layered structure from an interface with the light-emitting structure toward opposite end of the current diffusion layer, thereby controlling a resistivity of the current diffusion layer in the thickness direction.- View Dependent Claims (9)
-
Specification