Process for encapsulating a component made of organic semiconductors

• US 6,936,963 B2
• Filed: 05/02/2003
• Issued: 08/30/2005
• Est. Priority Date: 05/03/2002
• Status: Expired due to Fees

• Current Assignee: Patent-Treuhand Gesellschaft fur
• Original Assignee: Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen mbH (Ams-Osram AG)
• Inventors: Messner, Ekkehard, Langer, Alfred
• Primary Examiner(s): Evans, Geoffrey S.
• Application Number:
  US10/429,057
• Publication Number:
  US 20030222061A1
• Time in Patent Office: 851 Days
• Field of Search: 219/121.64, 219/121.66, 219/85.13, 313/509
• US Class Current: 313/509
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

A process for encapsulating a component made of organic semiconductors is provided which includes steps of: a) providing a housing including a substrate with electrical connections and a cover; b) mixing a soldering glass with at least one of a binder and a solvent; c) applying the soldering glass at least to the cover, in the form of an encircling bank; d) expelling the binder or solvent; e) sintering-on of the solder; f) covering the substrate with layers which represent the semiconductor component together with electrodes; g) placing the cover onto the substrate; and h) locally heating the soldering glass by means of a light source with a predetermined peak wavelength, wherein the housing parts and soldering glass are matched to one another such that their coefficients of thermal expansion differ from one another by less than 1.0×10⁻⁶K⁻¹.

Claims

1. A process for encapsulating a component made of organic semiconductors, said process comprising:

providing;

(i) a substrate as a housing part with electrical connections applied to it, (ii) at least one further housing part including at least a cover, and (iii) soldering glass, wherein a coefficient of thermal expansion of the substrate, a coefficient of thermal expansion of the further housing part and a coefficient of thermal expansion of the soldering glass are matched such that the respective coefficients of thermal expansion differ from one another by less than 1.0×

10<sup>−

6</sup>K<sup>−

1</sup>;

applying the soldering glass at least to the cover, as an encircling bank, wherein the soldering glass is a pulverulent soldering glass which is tricked into position;

sintering-on the solder;

covering the substrate with the semiconductor component together with electrodes;

placing the cover onto the substrate; and

locally heating the soldering glass with a light source having a predetermined peak wavelength.

2. An encapsulated semiconductor component produced by the process of claim 1.

3. The process as claimed in claim 1, wherein the provided soldering glass is also applied to the substrate.

4. An encapsulated semiconductor component produced by the process of claim 3.

5. The process as claimed in claim 1, wherein the light source is a laser which absorbs in the near IR at 780 to 1100 nm.

6. An encapsulated semiconductor component produced by the process of claim 5.

7. The process as claimed in claim 1, further comprising at least one of preheating and reheating the soldering glass with the light source.

8. An encapsulated semiconductor component produced by the process of claim 7.

9. The process as claimed in claim 1, wherein the at least one further housing part comprises separate side walls.

10. An encapsulated semiconductor component produced by the process of claim 9.

11. The process as claimed in claim 1, wherein the the provided soldering glass is mixed with a binder or solvent.

12. The process as claimed in claim 11, wherein the the binder or solvent is expelled after the soldering glass is applied.

13. The process as claimed in claim 11, wherein an agent which absorbs at least the peak wavelength of the light source, is additionally admixed to the provided soldering glass.

14. An encapsulated semiconductor component produced by the process of claim 13.

15. The process as claimed in claim 13, wherein the agent is iron oxide.