Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
First Claim
1. A magnetoresistance effect element comprising:
- a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer, the non-magnetic intermediate layer comprising a non-magnetic metallic layer and a resistance regulating layer stacked on the non-magnetic metallic layer, the resistance regulating layer formed in the non-magnetic intermediate layer or on the interface between the non-magnetic intermediate layer and at least one of the magnetization fixed layer and the magnetization free layer; and
a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of the magnetoresistance effect film, the resistance regulating layer containing an oxide, a nitride, a fluoride, a carbide or a boride as a principal component and including holes of a metal phase of 2% to 30%, and the mean diameter of each of the holes of the resistance regulating layer being in the range from 10% to 100% with respect to the total thickness of the magnetization free layer, the non-magnetic intermediate layer and the magnetization fixed layer.
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Accused Products
Abstract
There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.
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Citations
40 Claims
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1. A magnetoresistance effect element comprising:
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a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer, the non-magnetic intermediate layer comprising a non-magnetic metallic layer and a resistance regulating layer stacked on the non-magnetic metallic layer, the resistance regulating layer formed in the non-magnetic intermediate layer or on the interface between the non-magnetic intermediate layer and at least one of the magnetization fixed layer and the magnetization free layer; and
a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of the magnetoresistance effect film, the resistance regulating layer containing an oxide, a nitride, a fluoride, a carbide or a boride as a principal component and including holes of a metal phase of 2% to 30%, and the mean diameter of each of the holes of the resistance regulating layer being in the range from 10% to 100% with respect to the total thickness of the magnetization free layer, the non-magnetic intermediate layer and the magnetization fixed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A magnetoresistance effect element comprising:
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a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and an non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer, the non-magnetic intermediate layer comprising a non-magnetic metallic layer and a resistance regulating layer stacked on the non-magnetic metallic layer, the resistance regulating layer formed in the non-magnetic intermediate layer or on the interface between the non-magnetic intermediate layer and at least one layer of the magnetization fixed layer and the magnetization free layer, and a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of the magnetoresistance effect film, the resistance regulating layer containing an oxide, a nitride, a fluoride, a carbide or a boride as a principal component and including holes, and the magnetoresistance effect element sensing a relative angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetization free layer by a change of current passing through the holes.
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29. A magnetoresistance effect element comprising;
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a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer, the non-magnetic intermediate layer comprising a non-magnetic metallic layer and a resistance relating layer stacked on the non-magnetic metallic layer, the resistance regulating layer formed in the non-magnetic intermediate layer or on the interface between the non-magnetic intermediate layer and at least one of the magnetization fixed layer and the magnetization free layer; and
a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of the magnetoresistance effect film, the resistance regulating layer containing an oxide, a nitride, a fluoride, a carbide or a boride as a principal component and having a pin holes at a rate of hole area which is 50% or less, and two adjacent layers which contact the resistance regulating layer having an electric conduction substantially limited to conduction through the pin holes of the resistance regulating layer. - View Dependent Claims (30, 31, 32, 33, 34)
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35. A magnetoresistance effect element comprising:
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a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer, the non-magnetic intermediate layer comprising a non-magnetic metallic layer and a resistance regulating layer stacked on the non-magnetic metallic layer, the resistance regulating layer formed in the non-magnetic intermediate layer or on the interface between the non-magnetic intermediate layer and at least one of the magnetization fixed layer and the magnetization free layer; and
a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of the magnetoresistance effect film, the resistance regulating layer containing an oxide, a nitride, a fluoride, a carbide or a boride as a principal component and having a pin holes at a rate of hole area which is 50% or less, and at least 10 pin holes being formed in the resistance regulating layer. - View Dependent Claims (36, 37, 38, 39, 40)
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Specification