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Programming and erasing methods for a non-volatile memory cell

  • US 6,937,521 B2
  • Filed: 05/28/2002
  • Issued: 08/30/2005
  • Est. Priority Date: 05/04/2000
  • Status: Expired due to Term
First Claim
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1. A method for erasing a memory array comprising:

  • adapting a parameter of an erase pulse as a function of the difference between the current threshold voltage of a cell of said memory array and an erase threshold value; and

    applying the erase pulse to a terminal of a cell of said array selected from the group consisting of gate, drain and source.

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