Apparatus and method for controlling etch depth

• US 6,939,811 B2
• Filed: 09/25/2002
• Issued: 09/06/2005
• Est. Priority Date: 09/25/2002
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Venugopal, Vijayakumar C., Miller, Alan J., Kamp, Tom A.
• Primary Examiner(s): Goudreau, George A.
• Application Number:
  US10/256,251
• Publication Number:
  US 20040084406A1
• Time in Patent Office: 1,077 Days
• Field of Search: 438/7, 438/8, 438/9, 438/16, 438/714, 438/719, 438/734, 216/60, 216/79, 156/345.25
• US Class Current: 438/734
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

Claims

1. A method for etching a feature having a feature depth in a layer of a wafer, the method comprising:

etching to a first depth of the feature at a first etching rate;

etching from the first depth to a second depth at a second etching rate, the second etching rate being slower than the first etching rate;

optically determining when the second depth has reached the feature depth; and

stopping etching the feature, wherein the wafer is a crystalline silicon wafer, wherein the feature is etched into the crystalline silicon wafer.

2. The method of claim 1, wherein etching to a first depth includes forming a desired profile of the feature.

3. The method of claim 2, wherein etching from the first depth to the second depth substantially retains the desired profile of the feature.

4. The method of claim 1, wherein the first etch depth is in the range of approximately 65 to 85 percent of the feature depth.

5. The method of claim 1, wherein the feature is a trench.

6. The method of claim 1, wherein the layer is a crystalline silicon layer.

7. The method of claim 1, wherein the etching depth is optically determined throughout the method.

8. The method of claim 7, further comprising optically determining when the first depth has been reached.

9. The method of claim 1, wherein the etching rate is changed by changing the composition of an etchant.

10. The method of claim 1, wherein the layer does not have an associated etch stop indicator.

11. The method of claim 1, wherein the layer does not have an etch stop layer.

12. The method of claim 1, wherein the optical determination is carried out using an optical end point technique.

13. The method of claim 12, wherein the optical end point technique is selected from the group comprising interferometric end point and broadband reflectometry based end point.

14. The method of claim 1, wherein the method is part of a process selected from the group comprising recess and shallow trench isolation.

15. The method of claim 1, wherein an absolute feature depth is optically determined.

16. A method for etching a feature having a feature depth in a layer of a wafer, the method comprising:

etching to a first depth of the feature at a first etching rate;

etching from the first depth to a second death at a second etching rate, the second etching rate being slower than the first etching rate;

optically determining when the second depth has reached the feature depth; and

stopping etching the feature, wherein the method is part of a process for shallow trench isolation.