Integrated inductor having magnetic layer

• US 6,940,147 B2
• Filed: 04/16/2004
• Issued: 09/06/2005
• Est. Priority Date: 11/23/1999
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Crawford, Ankur Mohan, Gardner, Donald S.
• Primary Examiner(s): Kang, Donghee
• Application Number:
  US10/826,245
• Publication Number:
  US 20040195647A1
• Time in Patent Office: 508 Days
• Field of Search: 257/528, 257531-533, 438/3, 438/329, 438/381, 336/65, 336/83.183, 336206-208, 336/200, 336/223, 336232-233, 296/021, 2960313- 15
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 41/042 by thin film techniques
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/32 Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer

Abstract

A dielectric layer is formed over a substrate comprising a semiconductor material. A magnetic layer is formed over the dielectric layer. The magnetic layer comprises an amorphous alloy comprising cobalt.

Claims

1. An inductor, comprising:

a first dielectric layer over a semiconductor substrate;

a first magnetic layer comprising an amorphous alloy which includes cobalt formed over the first dielectric layer;

a second dielectric layer formed over the first magnetic layer;

a conductive layer formed over the second dielectric layer, the conductive layer having a spiral-shape;

a third dielectric layer formed over the conductive layer;

a second magnetic layer formed over the third dielectric layer; and

a magnetic core in the center of the spiral-shape of the conductive layer, the magnetic core patting the second magnetic layer into contact with the first magnetic layer to form the inductor as part of a semiconductor based integrated circuit.

2. The inductor of claim 1, wherein the spiral-shape of the conductive layer comprises one or more turns.

3. The inductor of claim 2, wherein the one or more turns have a generally octagonal shape.

4. The inductor of claim 1, wherein the first magnetic layer is patterned.

5. The inductor of claim 4, wherein the first magnetic layer is patterned to further comprise slots perpendicular to the flow of current through the conductive layer.

6. The inductor of claim 1, wherein the second magnetic layer is patterned.

7. The inductor of claim 6, wherein the second magnetic layer is patterned to further comprise slots perpendicular to the flow of current through the conductive layer.

8. The inductor of claim 1, wherein the first magnetic layer and the second magnetic layer are formed of the same material.

9. The inductor of claim 1, further comprising a first adhesion layer underlying the conductive layer.

10. The inductor of claim 1, further comprising a second adhesion layer overlying the conductive layer.

11. The inductor of claim 1, further comprising a first barrier layer underlying the conductive layer.

12. The inductor of claim 1, further comprising a second barrier layer overlying the conductive layer.

13. The inductor of clam 1, wherein the amorphous alloy which includes cobalt comprises cobalt and an element or elements selected from the group consisting of zirconium, tantalum, niobium, rhenium, neodymium, praseodymium, or dysprosium.