Methods of forming integrated optoelectronic devices
First Claim
Patent Images
1. A method of forming an optoelectronic device, comprising the steps of:
- forming an electrically conductive layer on a substrate having a first electrically insulating layer thereon;
forming a mirror backing layer from the electrically conductive layer, by forming a groove that extends through the electrically conductive layer and exposes a first surface of the first electrically insulating layer;
removing a portion of the substrate and corresponding portion of the first electrically insulating layer to expose a front surface of the mirror backing layer;
forming an optically reflective mirror surface on the front surface of the mirror backing layer; and
recessing the first electrically insulating layer to expose a portion of the mirror blocking layer that is not covered by the optically reflective mirror surface.
0 Assignments
0 Petitions
Accused Products
Abstract
Methods of forming optoelectronic devices include forming an electrically conductive layer on a first surface of a substrate and forming a mirror backing layer from the electrically conductive layer by forming an endless groove that extends through the electrically conductive layer. A step is then performed to remove a portion of the substrate at a second surface thereof, which extends opposite the first surface. This step exposes a front surface of the mirror backing layer. An optically reflective mirror surface is then formed on the front surface of the mirror backing layer.
40 Citations
49 Claims
-
1. A method of forming an optoelectronic device, comprising the steps of:
-
forming an electrically conductive layer on a substrate having a first electrically insulating layer thereon;
forming a mirror backing layer from the electrically conductive layer, by forming a groove that extends through the electrically conductive layer and exposes a first surface of the first electrically insulating layer;
removing a portion of the substrate and corresponding portion of the first electrically insulating layer to expose a front surface of the mirror backing layer;
forming an optically reflective mirror surface on the front surface of the mirror backing layer; and
recessing the first electrically insulating layer to expose a portion of the mirror blocking layer that is not covered by the optically reflective mirror surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
-
-
30. A method of forming an optoelectronic device, comprising the steps of:
-
forming an electrically conductive layer on a first surface of a substrate;
forming a mirror backing layer from the electrically conductive layer by forming a groove that extends through the electrically conductive layer;
removing a portion of the substrate at a second surface thereof extending opposite the first surface, to expose a front surface of the mirror backing layer; and
forming an optically reflective mirror surface on the front surface of the mirror backing layer. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39)
-
-
40. A method of forming an optoelectronic device, comprising the steps of:
-
forming a monocrystalline silicon mirror backing layer having a thickness greater than about 10 μ
m, adjacent a first surface of a silicon-on-insulator substrate;
forming a polysilicon hinge that mechanically couples the mirror backing layer to the silicon-on-insulator substrate;
removing a portion of the silicon-on-insulator substrate at a second surface thereof using a deep reactive ion etching technique, to expose a front surface of the mirror backing layer, and forming an optically reflective mirror surface on the front surface of the mirror backing layer. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49)
-
Specification