Three-dimensional integrated semiconductor devices
First Claim
1. A method of forming a three-dimensional integrated semiconductor device, comprising:
- providing a first device member, said first device member comprising a first circuit element formed at least partially in a first semiconductor film, wherein said semiconductor film is formed as a semiconductor island surrounded by insulating material, a first contact portion, and a first planar insulating layer of dielectric material having a first free surface;
providing a second device member, said second device member comprising a second circuit element formed at least partially in a second semiconductor film and a second planar insulating layer of dielectric material formed on the second semiconductor film having a second free surface;
stacking said first and second device members on top of each other such that said first free surface of said first planar insulating layer faces said second free surface of said second planar insulating layer;
bonding said first planar insulating layer and said second planar insulating layer together; and
forming a second contact portion extending through said second device member, said second semiconductor layer, said second planar insulating layer and said first planar insulating layer to said first contact portion.
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Abstract
The present invention describes a process for three-dimensional integration of semiconductor devices and a resulting device. The process combines low temperature wafer bonding methods with backside/substrate contact processing methods, preferably with silicon on insulator devices. The present invention utilizes, in an inventive fashion, low temperature bonding processes used for bonded silicon on insulator (SOI) wafer technology. This low temperature bonding technology is adopted for stacking several silicon layers on top of each other and building active transistors and other circuit elements in each one. The back-side/substrate contact processing methods allow the interconnection of the bonded SOI layers.
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Citations
59 Claims
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1. A method of forming a three-dimensional integrated semiconductor device, comprising:
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providing a first device member, said first device member comprising a first circuit element formed at least partially in a first semiconductor film, wherein said semiconductor film is formed as a semiconductor island surrounded by insulating material, a first contact portion, and a first planar insulating layer of dielectric material having a first free surface;
providing a second device member, said second device member comprising a second circuit element formed at least partially in a second semiconductor film and a second planar insulating layer of dielectric material formed on the second semiconductor film having a second free surface;
stacking said first and second device members on top of each other such that said first free surface of said first planar insulating layer faces said second free surface of said second planar insulating layer;
bonding said first planar insulating layer and said second planar insulating layer together; and
forming a second contact portion extending through said second device member, said second semiconductor layer, said second planar insulating layer and said first planar insulating layer to said first contact portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of forming a three-dimensional integrated semiconductor device, comprising:
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providing a first semiconductor circuit element, said first semiconductor circuit element comprising a first contact portion and a first planar insulating layer of dielectric material covering said first semiconductor circuit element and said first contact portions and having a first free surface;
providing a second semiconductor circuit element formed on a second planar insulating layer of dielectric material having a second free surface;
stacking said first and said second semiconductor circuit elements on top of each other such that said first free surface of said first planar insulating layer faces said second free surface of said second planar insulating layer;
bonding said first planar insulating layer and said second planar insulating layer together; and
forming a second contact portion extending through said second semiconductor circuit element, said second planar insulating layer and said first planar insulating layer to a first contact portion by etching a via having an aspect ratio greater than 10 and filling it with conductive material. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A method of forming a three-dimensional integrated semiconductor device, comprising:
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providing a first semiconductor device element, said first semiconductor device element comprising at least two circuit elements stacked on top of each other and fused together, a first contact portion and a first planar insulating layer of dielectric material having a first free surface;
providing a second semiconductor device element formed on a second planar insulating layer of dielectric material having a second free surface;
stacking said first and said second semiconductor device elements on top of each other such that said first free surface of said first planar insulating layer faces said second free surface of said second planar insulating layer;
bonding said first planar insulating layer and said second planar insulating layer together; and
forming a second contact portion extending through said second semiconductor device element, said second planar insulating layer and said first planar insulating layer to said first contact portion by etching at least one via having an aspect ratio greater than 10 and filling it with conductive material. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49)
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50. A method of forming a three-dimensional integrated semiconductor device, comprising:
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providing a first semiconductor film with a first planar insulating layer of dielectric material having a first free surface;
providing a second semiconductor film with a second planar insulating layer of dielectric material having a second free surface;
stacking said first and said second semiconductor films on top of each other such that said first free surface of said first planar insulating layer faces said second free surface of said second planar insulating layer and such that the first and the second semiconductor films are separated by the first and the second planar insulating layers;
bonding said first planar insulating layer and said second planar insulating layer together;
forming a circuit element at least partially in each of said first and second semiconductor films; and
forming a contact portion by etching a via having an aspect ratio greater than 10 and filling it with conductive material. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58, 59)
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Specification