Process for low temperature atomic layer deposition of RH
First Claim
Patent Images
1. A method of forming a capacitor comprising the steps of:
- forming a first and second electrode;
forming a dielectric layer between said first and second electrode; and
wherein at least one of said first and second electrode is formed by conducting atomic layer deposition of a rhodium group metal precursor in a deposition chamber and introducing oxygen into said deposition chamber to obtain a substantially pure metallic rhodium layer.
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Abstract
A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.
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Citations
26 Claims
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1. A method of forming a capacitor comprising the steps of:
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forming a first and second electrode;
forming a dielectric layer between said first and second electrode; and
wherein at least one of said first and second electrode is formed by conducting atomic layer deposition of a rhodium group metal precursor in a deposition chamber and introducing oxygen into said deposition chamber to obtain a substantially pure metallic rhodium layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming a rhodium upper electrode of a capacitor in an insulating layer of a substrate, comprising the steps of:
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forming a conductive layer;
forming a dielectric layer over said conductive layer; and
forming a rhodium layer by atomic layer deposition at a temperature of about 100°
C. to about 200°
C. in contact with said dielectric layer, wherein said step of forming said rhodium layer further comprises the steps of introducing said substrate in a deposition region of a reactor chamber, forming a rhodium monolayer and introducing oxygen into said deposition chamber. - View Dependent Claims (14, 15, 16)
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17. A method of forming a rhodium upper electrode of a capacitor in an insulating layer of a substrate, comprising the steps of:
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forming a conductive layer;
forming a dielectric layer over said conductive layer; and
forming a rhodium layer by atomic layer deposition at a temperature of about 100°
C. to about 200°
C. over said dielectric layer, wherein said step of forming said rhodium layer by atomic layer deposition further comprises the steps of;
introducing said substrate in a deposition region of a reactor chamber;
introducing dicarbonyl cyclopentadienyl rhodium into said reactor chamber; and
introducing oxygen into said reactor chamber. - View Dependent Claims (18, 19)
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20. A method of forming a capacitor comprising the steps of:
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forming a rhodium layer by atomic layer deposition at a temperature of about 100°
C. to about 200°
C., wherein said step of forming said rhodium layer by atomic layer deposition comprises;
introducing a substrate in a deposition region of a reactor chamber;
introducing dicarbonyl cyclopentadienyl rhodium into said reactor chamber;
introducing a gas selected from the group consisting of helium, argon and nitrogen; and
introducing oxygen to form said rhodium layer;
forming a dielectric layer over said rhodium layer; and
forming a conductive layer over said dielectric layer. - View Dependent Claims (21, 22)
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23. A method of forming a capacitor comprising the steps of:
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forming a rhodium layer by atomic layer deposition at a temperature of about 100°
C. to about 200°
C., wherein said step of forming said rhodium layer by atomic layer deposition further comprises introducing a substrate in a deposition region of a reactor chamber, introducing dicarbonyl cyclopentadienyl rhodium into said reactor chamber; and
introducing oxygen into said reactor chamber;
forming a dielectric layer over said rhodium layer; and
forming a conductive layer over said dielectric layer. - View Dependent Claims (24, 25)
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26. A method of fabricating a DRAM cell container capacitor comprising the steps of:
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forming a first and second conductive layer; and
forming a dielectric between said first and second conductive layer, at least one of said first and second conductive layer being a rhodium layer formed by atomic layer deposition of dicarbonyl cyclopentadienyl rhodium at a temperature of about 100°
C. to about 200°
C. and for about 5 seconds to form an organo-rhodium layer followed by exposure of said organo-rhodium layer to oxygen to form said rhodium layer.
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Specification