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Barrier free copper interconnect by multi-layer copper seed

  • US 6,943,111 B2
  • Filed: 02/10/2003
  • Issued: 09/13/2005
  • Est. Priority Date: 02/10/2003
  • Status: Active Grant
First Claim
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1. A method for creation of a barrier-free interconnect that includes copper, comprising:

  • providing an opening in a layer of dielectric, over a semiconductor substrate;

    providing a first seed layer comprising copper alloy over sidewalls of said opening;

    providing a second seed layer comprising copper over the surface of said first seed layer;

    filling said opening with an interconnect material that includes copper, creating an interconnect surrounded by the first and second seed layers; and

    annealing said first and second seed layers, creating a barrier-less seed layer around said interconnect.

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