Semiconductor and device nanotechnology and methods for their manufacture
First Claim
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1. A method for preparing a device comprising:
- providing a substrate;
depositing a layer comprising metal on the substrate;
processing the deposited layer into a substance comprising substantially parallel nanoscale pores;
depositing a substance of first composition in the nanoscale pores; and
providing at least one additional layer of second composition substantially perpendicular to the substance deposited in the nanoscale pores.
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Abstract
Device nanotechnology based on silicon wafers and other substrates is described. Methods for preparing such devices are discussed. The teachings allow integration of current semiconductor device, sensor device and other device fabrication methods with nanotechnology. Integration of nanotubes and nanowires to wafers is discussed. Sensors, electronics, biomedical and other devices are presented.
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Citations
19 Claims
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1. A method for preparing a device comprising:
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providing a substrate;
depositing a layer comprising metal on the substrate;
processing the deposited layer into a substance comprising substantially parallel nanoscale pores;
depositing a substance of first composition in the nanoscale pores; and
providing at least one additional layer of second composition substantially perpendicular to the substance deposited in the nanoscale pores. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for preparing a device comprising:
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providing a wafer comprising silicon;
depositing a layer on the wafer;
processing the deposited layer Into a substance comprising substantially parallel nanoscale pores;
preparing nanotubes or nanowires in the nanoscale pores; and
providing at least one additional layer of second composition substantially perpendicular to the nanotubes.
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Specification