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Method for microfabricating structures using silicon-on-insulator material

  • US 6,946,314 B2
  • Filed: 08/15/2003
  • Issued: 09/20/2005
  • Est. Priority Date: 01/02/2001
  • Status: Active Grant
First Claim
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1. A method for producing micromachined devices, comprising the steps of:

  • (a) obtaining a Silicon-On-Insulator (SOI) wafer, which comprises (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer;

    wherein a mesa etch has been made on the device layer of the SOI wafer, (b) obtaining a substrate, wherein a pattern has been formed onto the substrate;

    (c) bonding the SOI wafer and the substrate together;

    (d) removing the handle layer of the SOI wafer;

    (e) removing the dielectric layer of the SOI wafer; and

    (f) after step (e), performing a structural etch on the device layer.

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