Methods for manufacturing storage nodes of stacked capacitors
First Claim
1. A method of manufacturing a node of a stacked capacitor, the method comprising:
- forming a first dielectric layer having a contact plug therein on an integrated circuit substrate;
forming a second dielectric layer including a storage node hole adjacent the contact plug on the first dielectric layer;
depositing a conductive layer into the storage node hole and on the second dielectric layer, the conductive layer having an associated work function;
oxidizing the conductive layer to form a conductive oxide layer on the conductive layer, the conductive oxide layer having an associated work function that is sufficiently close to the work function of the conductive layer that the conductive layer and the conductive oxide layer operate together as the node of the stacked capacitor; and
removing the second dielectric layer to define the node of the stacked capacitor.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods for forming a stacked capacitor include forming a first dielectric layer having a contact plug therein on an integrated circuit substrate. A second dielectric layer including a storage node hole is formed adjacent the contact plug on the first dielectric layer. A conductive layer is deposited into the storage node hole and on the second dielectric layer. The conductive layer has an associated work function. The conductive layer is oxidized to form a conductive oxide layer on the conductive layer. The conductive oxide layer has an associated work function that is sufficiently close to the work function of the conductive layer that the conductive layer and the conductive oxide layer operate together as the node of the stacked capacitor. The second dielectric layer is removed to define the node of the stacked capacitor. The stacked capacitor may be a metal-insulator-metal (MIM) capacitor and the conductive layer may be formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir). Related structures (devices) are also disclosed.
-
Citations
21 Claims
-
1. A method of manufacturing a node of a stacked capacitor, the method comprising:
-
forming a first dielectric layer having a contact plug therein on an integrated circuit substrate;
forming a second dielectric layer including a storage node hole adjacent the contact plug on the first dielectric layer;
depositing a conductive layer into the storage node hole and on the second dielectric layer, the conductive layer having an associated work function;
oxidizing the conductive layer to form a conductive oxide layer on the conductive layer, the conductive oxide layer having an associated work function that is sufficiently close to the work function of the conductive layer that the conductive layer and the conductive oxide layer operate together as the node of the stacked capacitor; and
removing the second dielectric layer to define the node of the stacked capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of manufacturing a node of a stacked capacitor, the method comprising:
-
forming a first dielectric layer having a contact plug therein on an integrated circuit substrate;
forming a second dielectric layer including a storage node hole adjacent the contact plug on the first dielectric layer;
depositing a conductive layer into the storage node hole and on the second dielectric layer;
oxidizing the conductive layer to form a conductive oxide layer on the conductive layer; and
removing the second dielectric layer to define the node of the stack capacitor including the conductive layer and the conductive oxide layer. - View Dependent Claims (12, 13)
-
-
14. A method for fabricating a metal-insulator-metal (MIM) capacitor, the method comprising:
-
forming a mold oxide layer having a conductive plug on a semiconductor substrate;
etching a predetermined portion of the mold oxide layer to expose the conductive plug so that a lower electrode region is defined;
filling a conductive layer into the lower electrode region of the mold oxide layer;
oxidizing the conductive layer to form a conductive oxide layer to be higher than the mold oxide layer; and
removing the mold oxide layer, wherein the mold oxide layer has a thickness such that the conductive layer can be fully reclaimed without seams, the conductive oxide layer is a conductive material that has almost the same work function as the conductive layer, and the conductive layer is formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir). - View Dependent Claims (15, 16, 17)
-
-
18. A method for fabricating a metal-insulator-metal (MIM) capacitor, comprising:
-
forming a plurality of lower electrodes to a predetermined thickness on a semiconductor substrate;
forming a dielectric layer on the plurality of lower electrodes;
forming a conductive layer for an upper electrode on the dielectric layer; and
forming a conductive oxide layer by oxidizing the conductive layer to completely fill a space between ones of the plurality of lower electrodes, thereby forming upper electrode that is made of the conductive layer and the conductive oxide layer, wherein the conductive oxide layer is a conductive material that has most the same work function as the conductive layer, and the conductive layer, which constitutes the upper electrode, is formed of a material selected from the group consisting of ruthenium (Ru), tungsten (W) and iridium (Ir). - View Dependent Claims (19, 20, 21)
-
Specification