Opposed terminal structure having a nitride semiconductor element
First Claim
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1. An opposed terminal structure comprising:
- a supporting substrate having conductivity;
a nitride semiconductor having a light-emitting layer;
a first terminal formed on one face of the nitride semiconductor; and
a second terminal formed on another face of the nitride semiconductor, wherein the first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching from one into a plurality of branches, wherein the thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor, and wherein the supporting substrate is formed of nitride semiconductor.
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Abstract
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
164 Citations
13 Claims
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1. An opposed terminal structure comprising:
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a supporting substrate having conductivity;
a nitride semiconductor having a light-emitting layer;
a first terminal formed on one face of the nitride semiconductor; and
a second terminal formed on another face of the nitride semiconductor, wherein the first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching from one into a plurality of branches, wherein the thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor, and wherein the supporting substrate is formed of nitride semiconductor. - View Dependent Claims (2, 3, 4)
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5. An opposed terminal structure comprising:
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a supporting substrate having conductivity;
a first terminal disposed on one side of the supporting substrate;
a nitride semiconductor having a light-emitting layer; and
a second terminal forming an opposed terminal structure with the first terminal, wherein the first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching from one into a plurality of branches, wherein the thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor, and wherein the supporting substrate is formed of nitride semiconductor. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13)
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Specification