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CMOS image sensor and method of fabrication

  • US 6,946,715 B2
  • Filed: 02/19/2003
  • Issued: 09/20/2005
  • Est. Priority Date: 02/19/2003
  • Status: Expired due to Fees
First Claim
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1. A two color pixel comprising:

  • a substrate having a surface;

    a first color component photoconversion device located below the surface of said substrate at a first absorption depth for a first wavelength of light; and

    a second color component photoconversion device located below the surface of said substrate at a second absorption depth for a second wavelength of light;

    wherein said first color component photoconversion device and said second color component photoconversion device overlap vertically within said substrate such that the first color component photoconversion device is located closer to the surface of the substrate than the second color component photoconversion device and said first and second color component photoconversion devices are spaced apart vertically by a region of said substrate which does not produce photogenerated charges; and

    a two-color output processing circuit respectively coupled to said first and second color component photoconversion devices, said processing circuit being configured to output signals corresponding to respective charges produced by said first and second color component photoconversion devices.

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