Distributed Bragg reflector and method of fabrication

• US 6,947,217 B2
• Filed: 12/14/2001
• Issued: 09/20/2005
• Est. Priority Date: 12/14/2001
• Status: Expired due to Fees

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Zhu, Jintian, Corzine, Scott W., Tan, Michael Renne Ty, Lin, Chao Kun, Leary, Michael H.
• Primary Examiner(s): Dunn, Drew A.
• Assistant Examiner(s): Pritchett, Joshua L
• Application Number:
  US10/022,757
• Publication Number:
  US 20030112517A1
• Time in Patent Office: 1,376 Days
• Field of Search: 359/585, 359/584, 359/359, 372/20, 372/94, 372/43, 372/44, 372/96, 372/45, 257/94
• US Class Current: 359/584
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18363 comprising air layers

Abstract

A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

Claims

1. A Bragg reflector comprising:

one or more first layers adjacent one or more second layers, the first and second layers having at least one sidewall, wherein the first and second layers define one or more gaps; and

a support layer formed over a portion of the sidewalls to support the second layers against movement, said support layer partially overlays a top side of a top layer of said one or more second layers.

2. The Bragg reflector of claim 1 wherein the second layers and the support layer comprise substantially the same material.

3. The Bragg reflector of claim 1 wherein at least a portion of the support layer is electrically conductive.

4. The Bragg reflector of claim 1 wherein a portion of the support layer is electrically non-conductive.

5. The Bragg reflector of claim 1, wherein the support layer holds said second layers substantially parallel to each other.

6. A distributed Bragg reflector comprising:

a substrate;

a plurality of structure layers on the substrate each spaced apart by a gap, the structure layers each having edges; and

a support layer about a portion of the edges for supporting the structure layers such that the structure layers remain stationary, said support layer patially overlaps a top side of a top structure layer.

7. The distributed Bragg reflector of claim 6 further comprising sacrificial layers between the structure layers, the sacrificial layers undercut to define the gaps.

8. The distributed Bragg reflector of claim 6 wherein the support layer comprises a material selected from the group consisting of InP, GaAs, and Si.

9. The distributed Bragg reflector of claim 6 wherein the structure layers comprise a material selected from the group consisting of InP, GaAs, and Si.

10. The distributed Bragg reflector of claim 6 wherein the support layer covers at least a portion of a top of the structure layers.

11. The distributed Bragg reflector of claim 6, wherein the support layer further holds said plurality of structure layers substantially parallel to each other.

12. A distributed Brag reflector comprising:

a substrate;

a plurality of structure layers on top of the substrate each spaced apart by a gap, the structure layers each having edges; and

a support layer being about a portion of the edges and overlapping a top portion of a top structure layer.