Method and apparatus for tuning a Bragg grating in a semiconductor substrate
First Claim
1. An apparatus, comprising:
- a semiconductor substrate layer;
a heater disposed proximate to the semiconductor substrate layer;
an optical path through the semiconductor substrate layer, wherein a temperature of the semiconductor substrate layer including the optical path is responsive to the heater;
a plurality of silicon and polysilicon regions disposed in the semiconductor substrate layer along the optical path forming a Bragg grating having a Bragg wavelength, the Bragg wavelength responsive to the temperature of the semiconductor substrate layer;
a first optical confinement layer disposed proximate to the semiconductor substrate layer; and
a second optical confinement layer disposed proximate to the semiconductor substrate layer such that the semiconductor substrate layer is disposed between the first and second optical confinement layers.
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Abstract
A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.
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Citations
19 Claims
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1. An apparatus, comprising:
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a semiconductor substrate layer;
a heater disposed proximate to the semiconductor substrate layer;
an optical path through the semiconductor substrate layer, wherein a temperature of the semiconductor substrate layer including the optical path is responsive to the heater;
a plurality of silicon and polysilicon regions disposed in the semiconductor substrate layer along the optical path forming a Bragg grating having a Bragg wavelength, the Bragg wavelength responsive to the temperature of the semiconductor substrate layer;
a first optical confinement layer disposed proximate to the semiconductor substrate layer; and
a second optical confinement layer disposed proximate to the semiconductor substrate layer such that the semiconductor substrate layer is disposed between the first and second optical confinement layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An apparatus, comprising:
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a semiconductor substrate;
an optical path through the semiconductor substrate;
a plurality of charge modulated regions disposed along the optical path within the semiconductor substrate to establish a Bragg grating having a plurality of perturbations of a refractive index along the optical path;
a first optical confinement layer disposed proximate to the semiconductor substrate; and
a second optical confinement layer disposed proximate to the semiconductor substrate such that the semiconductor substrate is disposed between the first and second optical confinement layers. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification