Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
First Claim
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1. A group-III nitride crystal growth method, comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal;
b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and
c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
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Abstract
A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
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Citations
69 Claims
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1. A group-III nitride crystal growth method, comprising the steps of:
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a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal;
b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and
c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69)
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22. A group-III nitride crystal growth apparatus comprising:
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a reaction vessel in which a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal is prepared; and
a crystal growth condition setting unit for setting a crystal growth condition for growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen, wherein said crystal growth condition setting unit sets the predetermined crystal growth condition according to a zone defined by a pressure and a temperature in the crystal growth process. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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Specification