Method for post-etch and strip residue removal on coral films
First Claim
Patent Images
1. A method for cleaning a semiconductor wafer, comprising:
- plasma etching a feature into a low K dielectric layer having a photoresist mask, the plasma etching generating etch residues;
ashing the semiconductor wafer to remove the photoresist mask, the ashing generating ashing residues; and
removing the etching residues and the ashing residues from the low K dielectric layer having the plasma etched feature, the removing being enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent.
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Abstract
A method for cleaning a semiconductor wafer is provided which includes plasma etching a feature into a low K dielectric layer having a photoresist mask where the plasma etching generates etch residues. The method also includes ashing the semiconductor wafer to remove the photoresist mask where the ashing generating ashing residues. The method further includes removing the etching residues and the ashing residues from the low K dielectric layer where the removing is enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent.
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Citations
24 Claims
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1. A method for cleaning a semiconductor wafer, comprising:
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plasma etching a feature into a low K dielectric layer having a photoresist mask, the plasma etching generating etch residues; ashing the semiconductor wafer to remove the photoresist mask, the ashing generating ashing residues; and removing the etching residues and the ashing residues from the low K dielectric layer having the plasma etched feature, the removing being enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for cleaning a semiconductor wafer, comprising:
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plasma etching a feature into a low K dielectric layer, the plasma etching generating etch residues in and around the feature; subjecting the semiconductor wafer to an ashing operation, the ashing operation generating ashing residues; and scrubbing the low K dielectric layer having the plasma etched feature, using a mixture fluid including a cleaning chemistry and a wetting agent, the wetting agent being configured to condition the low K dielectric layer to facilitate cleaning of the etch residues and the ashing residues with the cleaning chemistry. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for cleaning a semiconductor wafer, comprising:
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plasma etching a feature into a low K dielectric layer, the plasma etching generating etch residues in and around the feature; subjecting the semiconductor wafer to an ashing operation, the ashing operation generating ashing residues; scrubbing the low K dielectric layer having the plasma etched feature, using a mixture fluid including a cleaning chemistry and a wetting agent, the wetting agent being configured to condition the low K dielectric layer to facilitate cleaning of the etch residues and the ashing residues with the cleaning chemistry; and scrubbing the low K dielectric layer having the plasma etched feature, using the brush while applying deionized (DI) water after removing the etching residues and the ashing residues. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A method for cleaning a semiconductor wafer, comprising:
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plasma etching a feature into a low K dielectric layer, the plasma etching generating etch residues in and around the feature; subjecting the semiconductor wafer to an ashing operation, the ashing operation generating ashing residues; scrubbing the low K dielectric layer having the plasma etched feature, using a mixture fluid including a cleaning chemistry and a wetting agent, the wetting agent being configured to condition the low K dielectric layer to facilitate cleaning of the etch residues and the ashing residues with the cleaning chemistry, the wetting agent being a surfactant and the cleaning chemistry being a standard clean-1 (SC-1) solution including a combination of NH4OH, H2O2, and deionized (DI) water, the surfactant having a concentration between about 0.005 percent by weight to about 0.1 percent by weight, combination ratio of NH4OH, H2O2, and DI water being between about 1;
4;
10 and about 1;
4;
30; andscrubbing the low K dielectric layer having the plasma etched feature, using the brush while applying deionized (DI) water after removing the etching residues and the ashing residues.
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Specification