Method of forming a vertical MOS transistor
First Claim
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1. A method of forming a MOS transistor in a semiconductor material of a first conductivity type, the method comprising the steps of:
- forming a first region of a second conductivity type in the semiconductor material;
forming a semiconductor region of the first conductivity type on the semiconductor material, the semiconductor region having a first side wall, an opposite second side wall, and a top surface;
forming a layer of insulation material on the semiconductor material adjacent to the semiconductor region;
forming a layer of conductive material on the layer of insulation material;
removing substantially all of the layer of conductive material that lies vertically over the first region; and
etching the layer of conductive material to form a first gate and a second gate on the layer of insulation material, the first and second gates being on opposite sides of the semiconductor region.
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Abstract
A vertical MOS transistor has a very short channel length that is indirectly defined by the thickness of a layer of semiconductor material or the depths of implants. The transistor has a first (source/drain) region formed in a substrate material, a semiconductor region formed on the first region, and a second (source/drain) region formed in the top surface of the semiconductor region. The distance between the first region and the second region defines the channel length of the transistor.
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Citations
19 Claims
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1. A method of forming a MOS transistor in a semiconductor material of a first conductivity type, the method comprising the steps of:
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forming a first region of a second conductivity type in the semiconductor material; forming a semiconductor region of the first conductivity type on the semiconductor material, the semiconductor region having a first side wall, an opposite second side wall, and a top surface; forming a layer of insulation material on the semiconductor material adjacent to the semiconductor region; forming a layer of conductive material on the layer of insulation material; removing substantially all of the layer of conductive material that lies vertically over the first region; and etching the layer of conductive material to form a first gate and a second gate on the layer of insulation material, the first and second gates being on opposite sides of the semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a MOS transistor in a semiconductor segment of a first conductivity type, the method comprising the steps of:
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implanting the semiconductor segment to form an implanted region of a second conductivity type, the implanted region having a top surface; forming a layer of semiconductor material on the semiconductor segment to contact the top surface of the implanted region, the layer of semiconductor material having the first conductivity type; etching the layer of semiconductor material to form a semiconductor region that contacts and lies vertically over substantially all of the implanted region; forming an isolation layer over the semiconductor segment after the layer of semiconductor material has been formed and after the layer of semiconductor material has been etched; and forming a gate on the isolation layer. - View Dependent Claims (13, 14)
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15. A method of forming a MOS transistor in a semiconductor segment of a first conductivity type, the method comprising the steps of:
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implanting the semiconductor segment to form an implanted region of a second conductivity type, the implanted region having a top surface, the implanted region lying below a top surface of the semiconductor segment; etching the semiconductor segment until a top surface of the semiconductor segment and the top surface of the implanted region lie in substantially a same plane to form a semiconductor region that contacts and lies over the implanted region before the isolation layer is formed; forming an isolation layer over the semiconductor segment; and forming a gate on the isolation layer. - View Dependent Claims (16, 17, 18, 19)
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Specification