Semiconductor and non-semiconductor non-diffusion-governed bioelectrodes

• US 6,949,763 B2
• Filed: 09/30/2002
• Issued: 09/27/2005
• Est. Priority Date: 10/11/2001
• Status: Expired due to Fees

• Current Assignee: Jeanne E. Pemberton, Marc Ovadia
• Original Assignee: Jeanne E. Pemberton, Marc Ovadia
• Inventors: Ovadia, Marc, Pemberton, Jeanne E.
• Primary Examiner(s): Zarneke, David
• Assistant Examiner(s): Anya, Igwe U.
• Application Number:
  US10/261,000
• Publication Number:
  US 20030114904A1
• Time in Patent Office: 1,093 Days
• Field of Search: 600345-350, 600/309, 600/300, 600/365, 600/381, 600/393, 600/348, 438238-513, 607116-122, 607/53, 607/129, 607/115, 607/127, 607/59, 257/40, 257/57, 257/72, 257/347, 60/27, 601/57
• US Class Current: 257/40
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites

Abstract

An implantable electrode and electrode system for contacting living biological material that includes an electrode assembly including at least a portion of the electrode, adapted to contact the living biological material at an electrode/tissue interface, exhibiting conduction that is substantially limited to electron or electron vacancy conduction. The implantable electrode is manufactured by coupling an electrode to a distal end of a conductor, and forming at least one surface of the electrode with a material that conducts electricity in a manner that is substantially limited to electron or electron vacancy conduction when the at least one surface is in contact with the living matter.

Claims

1. An implantable electrode system for contacting living biological material and sensing electrical potential in the biological material, comprising:

an electrode assembly including at least a first portion adapted to contact the living biological material at an electrode/tissue interface, the first portion of the electrode assembly exhibiting conduction that is substantially limited to electron or electron vacancy conduction during sensing of the electrical potential in the biological material, wherein the first portion is formed of a material exhibiting semiconductor properties.

2. The electrode system of claim 1, wherein the first portion is formed of a material selected from the group consisting of polythiophene, derivatized polythiophene, and conjugated polymer classes.

3. The electrode system of claim 1, wherein the first portion includes a material doped to form a p-type semiconductor.

4. The electrode system of claim 3, wherein the first portion includes a gold portion having at least one surface in proximity to the doped material.

5. The electrode system of claim 1 wherein the doped material is doped via electrochemical polymerization to form a p-type semiconductor.

6. The electrode system of claim 5, wherein the electrochemical polymerization includes performing anodic potentiostatic pulsation using a mixture of 3,4-ethlenedioxythiophene and counter ions.

7. An implantable electrode, comprising:

a conductor; and

an electrode assembly coupled to the conductor, the electrode assembly have at least one portion adapted to contact living biological material and that demonstrates semiconductor properties when in contact with the living biological material to sense electrical properties in the biological material, wherein the at least one portion performs conduction solely via electron or hole conduction when in contact with the living biological material, wherein the at least one portion includes a doped material doped to form a p-type semiconductor.

8. The electrode of claim 7, wherein the at least one portion is formed of a material selected from the group consisting of polythiophene, derivatized polythiophene, and conjugated polymer classes.

9. The electrode of claim 7, wherein the first portion includes a gold portion having at least one surface in proximity to the doped material.

10. The electrode of claim 9, wherein the doped material is doped via electrochemical polymerization to form the p-type semiconductor.

11. The electrode of claim 10, in the electrochemical polymerization includes performing anodic potentiostatic pulsation using a mixture of 3,4-ethlenedioxythiophene and counter ions.