Electrostatic chuck and manufacturing method therefor

• US 6,950,297 B2
• Filed: 11/12/2002
• Issued: 09/27/2005
• Est. Priority Date: 11/14/2001
• Status: Active Grant

• Current Assignee: Sumitomo Osaka Cement Company Limited
• Original Assignee: Sumitomo Osaka Cement Company Limited
• Inventors: Kosakai, Mamoru
• Primary Examiner(s): Sircus, Brian
• Assistant Examiner(s): KITOV, ZEEV V
• Application Number:
  US10/294,837
• Publication Number:
  US 20030123213A1
• Time in Patent Office: 1,050 Days
• Field of Search: 361/234, 361/233, 501/88, 501/89, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H02N 13/00 Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Abstract

An electrostatic chuck of the invention comprising; a first insulating member whose upper surface serves as a mounting surface on which a plate specimen is mounted, a second insulating member which is positioned facing a lower surface side of the first insulating member, and an internal electrode located between the first insulating member and the second insulating member, wherein the first insulating member is a composite ceramic having as its main constituents 1 wt % to 4 wt % of silicon carbide, and aluminum oxide, with a volume resistivity value in a temperature range of −200° C. to 200° C., of 1×10¹⁴ Ωcm to 1×10¹⁶ Ωcm.

Claims

1. An electrostatic chuck comprising:

a first insulating member whose one principal plane serves as a mounting surface on which a plate specimen is mounted;

a second insulating member, which is positioned facing an other principal plane of said first insulating member; and

an internal electrode located between said first insulating member and said second insulating member, wherein

said first insulating member is formed from a composite ceramic having as its main constituents 1 wt % to 4 wt % of silicon carbide, and aluminum oxide, with a volume resistivity value over a temperature range of −

200°

C. to 200°

C., of 1×

10¹⁴ Ω

cm to 1×

10¹⁶ Ω

cm.

2. An electrostatic chuck according to claim 1, wherein an average particle diameter of aluminum oxide particles in said composite ceramic is 2 μ

m or less.

3. An electrostatic chuck according to claim 1, wherein an average particle diameter of silicon carbide particles in said composite ceramic is 1 μ

m or less.

4. An electrostatic chuck according to claim 1, wherein at least some of the silicon carbide particles in said composite ceramic are inside aluminum oxide particles.

5. An electrostatic chuck comprising:

a first insulating member whose one principal plane serves as a mounting surface on which a plate specimen is mounted;

a second insulating member, which is positioned facing an other principal plane of said first insulating member; and

an internal electrode located between said first insulating member and said second insulating member, wherein

said first insulating member is formed from a composite ceramic having as its main constituents silicon carbide, on the surface of which an insulating material is formed, and aluminum oxide, with a volume resistivity value over a temperature range of −

200°

C. to 200°

C., of. 1×

10¹⁴ Ω

cm to 1×

10¹⁶ Ω

cm.

6. An electrostatic chuck according to claim 5, wherein said insulating material is a mullite based material.

7. An electrostatic chuck according to claim 6, wherein a thickness of said mullite based material is 0.2 μ

m or less.

8. An electrostatic chuck according to claim 5, wherein an average particle diameter of the aluminum oxide particles in said composite ceramic is 2 μ

m or less.

9. An electrostatic chuck according to claim 5, wherein an average particle diameter of the silicon carbide particles in said composite ceramic is 1 μ

m or less.

10. An electrostatic chuck according to claim 5, wherein at least some of the silicon carbide particles in said composite ceramic are inside aluminum oxide particles.