Waveguide-based Bragg gratings with spectral sidelobe suppression and method thereof

• US 6,950,577 B2
• Filed: 07/01/2002
• Issued: 09/27/2005
• Est. Priority Date: 07/01/2002
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Morse, Michael T., Liu, Ansheng, Ovadia, Shlomo, Samara-Rubio, Dean A.
• Primary Examiner(s): Patel, Vip
• Assistant Examiner(s): Dong, Dalei
• Application Number:
  US10/188,016
• Publication Number:
  US 20040001671A1
• Time in Patent Office: 1,184 Days
• Field of Search: 385/14, 385/37, 385/10, 385129-132
• US Class Current: 385/37
• CPC Class Codes: G02B 6/124 Geodesic lenses or integrated gratings

Abstract

A waveguide Bragg grating (WBG) is apodized by varying the duty cycle of selected grating periods while fixing the pitch of the grating periods. In one embodiment, the WBG is implemented in a silicon substrate using polysilicon filled trenches of varying width while keeping the grating periods'"'"' pitch constant. The polysilicon trenches are formed so that if the width of one trench is increased compared to an adjacent grating period, the trench width in the other adjacent grating period (if present) is decreased.

Claims

1. An apparatus, comprising:

a substrate; and

a plurality of regions formed in the substrate, the plurality of regions having refractive indices different from that of the substrate, each of the plurality of regions and separated by intervening areas of the substrate form a grating, the grating having grating periods with substantially constant pitch, wherein each grating periods includes one of the plurality of regions and one of the intervening areas of the substrate, wherein consecutive ones of the plurality of regions have different widths and consecutive ones of the intervening areas have different widths; and

an optical path formed within the substrate passing through the plurality of regions and the intervening areas of the substrate.

2. The apparatus of claim 1 wherein the plurality of regions are trenches formed in the substrate, the plurality of trenches being filled with a material that is different from the substrate.

3. The apparatus of claim 1 wherein the plurality of regions are formed from polysilicon and the substrate is formed from crystalline silicon.

4. The apparatus of claim 3 wherein the polysilicon is formed by annealing amorphous silicon.

5. The apparatus of claim 1 wherein the plurality of regions is formed proximate to a buried insulator layer of a silicon-on-insulator (SOI) wafer.

6. The apparatus of claim 1 further comprising a cladding layer on the substrate and the plurality of regions.

7. The apparatus of claim 1 wherein the optical path comprises a rib waveguide formed in the substrate, the rib waveguide containing the plurality of regions.

8. The apparatus of claim 1 wherein the substrate and the plurality of regions form a Bragg grating.

9. The apparatus of claim 8 wherein the waveguide Bragg grating has less than 1000 grating periods with an enhanced extinction ratio of more than 10 dB over non-apodized waveguide Bragg grating.

10. The apparatus of claim 8 wherein the Bragg grating'"'"'s Bragg wavelength is tunable.

11. A method, comprising:

providing a silicon substrate with a buried layer having a refractive index less than that of the silicon substrate;

forming, in the silicon substrate and proximate the buried layer, a plurality of trenches separated by intervening areas of the silicon substrate to form a grating having grating periods of constant pitch, each of the grating periods including one of the plurality of trenches and one of the intervening areas of the silicon substrate, wherein consecutive ones of the plurality of trenches have different widths and consecutive ones of the intervening areas have different widths;

filling the plurality of trenches with a material having a refractive index different from that of the silicon substrate and greater than that of the buried layer; and

forming a second layer on the silicon substrate and plurality of filled trenches, the second layer having a refractive index less than those of the silicon substrate and the material of the plurality of filled trenches, the buried layer and the second layer defining an optical path through the plurality of trenches and the intervening areas of the silicon substrate.

12. The method of claim 11 wherein the material used to fill the plurality of trenches is polysilicon and the substrate is formed from crystalline silicon, wherein the polysilicon and the crystalline silicon form silicon-polysilicon interfaces of the grating.

13. The method of claim 12 wherein providing the silicon substrate with the buried layer comprises providing a silicon-on-insulator (SOI) wafer.

14. The method of claim 13 wherein the buried layer is formed from oxide.