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Semiconductor device including band-engineered superlattice

  • US 6,952,018 B2
  • Filed: 11/19/2003
  • Issued: 10/04/2005
  • Est. Priority Date: 06/26/2003
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a superlattice comprising a plurality of stacked groups of layers;

    each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon;

    said groups of layers arranged in an alternating pattern of first and second groups of layers, with each first group of layers comprising three base semiconductor monolayers, and each second group of layers comprising five base semiconductor monolayers;

    said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

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