Process and apparatus for removing a contaminant from a substrate

• US 6,953,654 B2
• Filed: 03/14/2002
• Issued: 10/11/2005
• Est. Priority Date: 03/14/2002
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ryza, Nicholas A., Awtrey, Allan W.
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US10/063,049
• Publication Number:
  US 20030175626A1
• Time in Patent Office: 1,307 Days
• Field of Search: 430/311, 430/322, 430/325, 430/331, 430/329, 134/1, 134/1.3
• US Class Current: 430/322
• CPC Class Codes: B08B 7/0021 by liquid gases or supercritical fluids
• CPC Class Codes: C23G 5/00 Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
• CPC Class Codes: G02B 27/0006 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation G02B1/18 takes precedence; cleaning in general B08B
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: G03F 7/405 Treatment with inorganic or organometallic reagents after imagewise removal
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

Contaminant removal from a substrate can be performed using a supercritical fluid. An apparatus can be configured to operate at conditions that take advantage of higher solubility of a contaminant in its supercritical state compared to its liquid state. The substrate can be exposed to a supercritical fluid in a chamber to remove at least some of the contaminant. Outside the chamber, the supercritical fluid can be cooled to its corresponding liquid state, in which lower solubility of the contaminant may allow the contaminant to separate into a different phase from the liquid phase of the supercritical fluid. Such contaminant removal can be highly advantageous to substrates that withstand only limited amounts of physical or mechanical stress or heat. The contaminant removal can also be used where geometries virtually prevent removal by physical or mechanical means.

Claims

1. A process for removing a contaminant from a substrate comprising:

placing the substrate within a chamber, wherein the substrate includes a pseudoplastic material and the contaminant;

exposing the pseudoplastic material to a supercritical fluid to remove at least part of the contaminant from the substrate;

flowing the supercritical fluid to a separator that lies at an elevation lower than the chamber;

separating at least a portion of the contaminant from a compound within the supercritical fluid; and

removing the substrate from the chamber after exposing,

wherein a shape of the pseudoplastic material, after removing, is not significantly changed when compared to the shape of the pseudoplastic material, before placing.

2. The process of claim 1, wherein:

the supercritical fluid comprises molecules with a dipole moment less than approximately one; and

the contaminant includes water.

3. The process of claim 1, further comprising purging the chamber with a gas before exposing, wherein the gas and the supercritical fluid comprise a same molecular compound.

4. The process of claim 1, wherein:

exposing is performed at an exposure temperature of at least a critical temperature of the supercritical fluid; and

separating is performed at a separation temperature below the critical temperature of the supercritical fluid.

5. The process of claim 1, further comprising decompressing the chamber after exposing, wherein decompressing is performed while the substrate lies within the chamber and at a rate such that the supercritical fluid does not form a liquid or a solid.

6. The process of claim 1, wherein:

the pseudoplastic material is at least part of a patterned organic layer defining an opening; and

the opening has an aspect ratio of at least approximately 2;

1.

7. The process of claim 1, wherein exposing is performed at least until an endpoint is detected.

8. A process for removing a contaminant from a substrate comprising:

placing the substrate within a chamber, wherein;

the contaminant overlies the substrate; and

the contaminant includes molecules having a dipole moment of at least approximately one;

exposing the substrate to a supercritical fluid to remove at least part of the contaminant from the substrate, wherein the supercritical fluid comprises molecules with a dipole moment less than approximately one;

flowing the supercritical fluid to a separator that lies at an elevation lower than the chamber;

separating at least a portion of the contaminant from a compound within the supercritical fluid; and

removing the substrate from the chamber after exposing.

9. The process of claim 8, wherein:

the substrate comprises a patterned layer defining an opening;

the opening has an aspect ratio of at least approximately 2;

1; and

at least part of the contaminant lies near a bottom of the opening.

10. The process of claim 8, further comprising purging the chamber with a gas before exposing, wherein the gas and the supercritical fluid comprise a same molecular compound.

11. The process of claim 8, wherein:

exposing is performed at an exposure temperature of at least a critical temperature of the supercritical fluid; and

separating is performed at a separation temperature below the critical temperature of the supercritical fluid.

12. The process of claim 8, further comprising decompressing the chamber after exposing, wherein decompressing is performed while the substrate lies within the chamber and at a rate such that the supercritical fluid does not form a liquid or a solid.

13. The process of claim 8, wherein exposing is performed at least until an endpoint is detected.

14. A process for removing a contaminant from a substrate comprising:

placing the substrate within a chamber, wherein the substrate includes a pseudoplastic material and the contaminant;

exposing the pseudoplastic material to a supercritical fluid to remove at least part of the contaminant from the substrate;

cooling the supercritical fluid to form a liquid, wherein cooling is performed on the supercritical fluid after it has been exposed to the pseudoplastic material;

pumping the liquid;

heating the liquid to form the supercritical fluid, wherein heating is performed on the liquid after it has been pumped; and

removing the substrate from the chamber after exposing,

wherein a shape of the pseudoplastic material, after removing, is not significantly changed when compared to the shape of the pseudoplastic material, before placing.

15. The process of claim 14, wherein:

the supercritical fluid comprises molecules with a dipole moment less than approximately one; and

the contaminant includes water.

16. The process of claim 14, further comprising purging the chamber with a gas before exposing, wherein the gas and the supercritical fluid comprise a same molecular compound.

17. The process of claim 14, further comprising:

flowing the supercritical fluid to a separator that lies at an elevation lower than the chamber; and

separating at least a portion of the contaminant from a compound within the supercritical fluid.

18. The process of claim 17, wherein:

exposing is performed at an exposure temperature of at least a critical temperature of the supercritical fluid; and

separating is performed at a separation temperature below the critical temperature of the supercritical fluid.

19. The process of claim 14, further comprising decompressing the chamber after exposing, wherein decompressing is performed while the substrate lies within the chamber and at a rate such that the supercritical fluid does not form a liquid or a solid.

20. The process of claim 14, wherein:

the pseudoplastic material is at least part of a patterned organic layer defining an opening; and

the opening has an aspect ratio of at least approximately 2;

1.

21. The process of claim 14, wherein exposing is performed at least until an endpoint is detected.

22. A process for removing a contaminant from a substrate comprising:

placing the substrate within a chamber, wherein;

the contaminant overlies the substrate; and

the contaminant includes molecules having a dipole moment of at least approximately one;

exposing the substrate to a supercritical fluid to remove at least part of the contaminant from the substrate, wherein the supercritical fluid comprises molecules with a dipole moment less than approximately one;

cooling the supercritical fluid to form a liquid, wherein cooling is performed on the supercritical fluid after it has been exposed to the pseudoplastic material;

pumping the liquid;

heating the liquid to form the supercritical fluid, wherein heating is performed on the liquid after it has been pumped; and

removing the substrate from the chamber after exposing.

23. The process of claim 22, wherein:

the resist is at least part of a patterned layer defining an opening;

the opening has an aspect ratio of at least approximately 2;

1; and

at least part of the contaminant lies near a bottom of the opening.

24. The process of claim 22, further comprising purging the chamber with a gas before exposing, wherein the gas and the supercritical fluid comprise a same molecular compound.

25. The process of claim 22, further comprising:

flowing the supercritical fluid to a separator that lies at an elevation lower than the chamber; and

separating at least a portion of the contaminant from a compound within the supercritical fluid.

26. The process of claim 25, wherein:

exposing is performed at an exposure temperature of at least a critical temperature of the supercritical fluid; and

separating is performed at a separation temperature below the critical temperature of the supercritical fluid.

27. The process of claim 22, further comprising decompressing the chamber after exposing, wherein decompressing is performed while the substrate lies within the chamber and at a rate such that the supercritical fluid does not form a liquid or a solid.

28. The process of claim 22, wherein exposing is performed at least until an endpoint is detected.