Manufacture method of semiconductor device with gate insulating films of different thickness

• US 6,953,727 B2
• Filed: 08/21/2003
• Issued: 10/11/2005
• Est. Priority Date: 08/28/2002
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Hori, Mitsuaki
• Primary Examiner(s): Chaudhari, Chandra
• Application Number:
  US10/604,846
• Publication Number:
  US 20040132253A1
• Time in Patent Office: 782 Days
• Field of Search: 438/200, 438/275, 438/906, 438/910, 438/981
• US Class Current: 438/275
• CPC Class Codes: H01L 21/823462 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: Y10S 438/981 Utilizing varying dielectric thickness

Abstract

A method of manufacturing a semiconductor device, having the steps of: (a) forming a first gate insulating film having a first thickness in a plurality of regions on a surface of a semiconductor substrate; (b) removing the first gate insulating film in a first region among the plurality of regions and allowing a native oxide film to be formed; (c) heating the semiconductor substrate in a reducing atmosphere and selectively reducing and removing the native oxide film formed in the step (b); and (d) after the step (c), forming a second gate insulating film having a second thickness thinner than the first thickness on the surface of the semiconductor substrate in the first region.

Claims

1. A method of manufacturing a semiconductor device, comprising steps of:

(a) forming a first gate insulating film having a first thickness in a plurality of regions on a surface of a semiconductor substrate;

(b) removing the first gate insulating film in a first region among the plurality of regions and allowing a native oxide film to be formed;

(c) heating the semiconductor substrate in a reducing atmosphere and selectively reducing and removing the native oxide film formed in said step (b) to a thickness of 0.1 nm or less; and

(d) after said step (c), forming a second gate insulating film having a second thickness thinner than the first thickness on the surface of the semiconductor substrate in the first region.

2. A method according to claim 1, further comprising steps of:

(e) after said step (d), removing the first gate insulating film or the second gate insulating film in a second region of the plurality of regions and allowing a native oxide film to be formed;

(f) after said step (e), heating the semiconductor substrate in a reducing atmosphere and selectively reducing and removing the native oxide film formed in said step (e); and

(g) forming a third gate insulating film having a third thickness thinner than the first and second thicknesses on the surface of the semiconductor substrate in the second region of the plurality of regions.

3. A method according to claim 1, wherein the selective reducing and removing in said step (C) is performed by maintaining an etch rate of the gate insulating films at ½

or smaller, compared to that of the native oxide film.

4. A method according to claim 1, wherein the selective reducing and removing in said step (C) is performed by maintaining an etch rate of the gate insulating films at ⅛

or smaller, compared to that of the native oxide film.

5. A method according to claim 1, wherein the reducing atmosphere in said step (C) is a hydrogen atmosphere or a mixed gas atmosphere containing hydrogen.

6. A method according to claim 1, wherein a pressure of the reducing atmosphere in said step (C) is 100 torr or smaller and a temperature of heating in said step (C) is in a range from 900°

C. to 1050°

C.

7. A method according to claim 1, wherein after the selective reducing and removing of the native oxide film in said step (C), the second gate insulating film is formed in said step (d) without exposing the semiconductor substrate to atmospheric air.

8. A method according to claim 1, wherein at least one of said steps (a) and (d) includes a step of forming an oxide film to be performed at an initial stage.

9. A method according to claim 8, wherein said at least one of said steps (a) and (d) further includes a step of nitriding said oxide film formed at the initial stage, to be performed at a succeeding stage.

10. A method according to claim 1, wherein the semiconductor substrate is a silicon substrate, the gate insulating film is a silicon oxide film or a silicon oxynitride film, the native oxide film includes an oxide film formed by at least one chemical process selected from a group consisting of an SPM process, an SC1 process, an SC2 process, and an ozonized water process.

11. A method according to claim 1, wherein said step (c) is done in hydrogen atmosphere at a pressure of 100 torr or lower.