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Manufacture method of semiconductor device with gate insulating films of different thickness

  • US 6,953,727 B2
  • Filed: 08/21/2003
  • Issued: 10/11/2005
  • Est. Priority Date: 08/28/2002
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device, comprising steps of:

  • (a) forming a first gate insulating film having a first thickness in a plurality of regions on a surface of a semiconductor substrate;

    (b) removing the first gate insulating film in a first region among the plurality of regions and allowing a native oxide film to be formed;

    (c) heating the semiconductor substrate in a reducing atmosphere and selectively reducing and removing the native oxide film formed in said step (b) to a thickness of 0.1 nm or less; and

    (d) after said step (c), forming a second gate insulating film having a second thickness thinner than the first thickness on the surface of the semiconductor substrate in the first region.

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