Method for fabricating a semiconductor device by transferring a layer to a support with curvature
First Claim
1. A method for fabricating a semiconductor device comprising:
- forming a support with curvature;
forming a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device with an external force applied so as to match a surface topology of the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate by physical means; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object, wherein the support bonded with the layer containing the device returns into a shape after forming the support with curvature at a time of finishing peeling the layer containing the device bonded with the support from the substrate by physical means.
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Accused Products
Abstract
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
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Citations
32 Claims
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1. A method for fabricating a semiconductor device comprising:
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forming a support with curvature;
forming a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device with an external force applied so as to match a surface topology of the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate by physical means; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object, wherein the support bonded with the layer containing the device returns into a shape after forming the support with curvature at a time of finishing peeling the layer containing the device bonded with the support from the substrate by physical means. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating a semiconductor device comprising:
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preparing a support with curvature;
preparing a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device with an external force applied so as to match a surface topology of the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate by physical means; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object, wherein the support bonded with the layer containing the device returns into a shape after preparing the support with curvature at a time of finishing peeling the layer containing the device bonded with the support from the substrate by physical means. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for fabricating a semiconductor device comprising:
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preparing a support with curvature;
preparing a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object, wherein the support bonded with the layer containing the device returns into a curved shape by restoring force after peeling the layer containing the device bonded with the support from the substrate. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A method for fabricating a semiconductor device comprising:
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preparing a support with curvature;
preparing a transfer object with curvature;
forming a layer containing at least a device over a substrate having higher rigidity than that of the support;
bonding the support with curvature to the layer containing the device;
peeling the layer containing the device bonded with the support from the substrate; and
bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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Specification