CT detector fabrication process

• US 6,953,935 B1
• Filed: 05/11/2004
• Issued: 10/11/2005
• Est. Priority Date: 05/11/2004
• Status: Active Grant

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Hoffman, David M.
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): TANINGCO, MARCUS H
• Application Number:
  US10/842,978
• Time in Patent Office: 518 Days
• Field of Search: 250/370.01, 250/370.09, 250/370.13, 250/370.14, 378/19, 378/98.8
• US Class Current: 250/370.13
• CPC Class Codes: G01T 1/242 Stacked detectors, e.g. for depth information constructional or manufacturing details H01L25/00
• CPC Class Codes: G01T 1/249 specially adapted for use in SPECT or PET SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20

Abstract

A CT detector capable of energy discrimination and direct conversion is disclosed. The detector includes multiple layers of semiconductor material with the layers having varying thicknesses. The detector is constructed to be segmented in the x-ray penetration direction so as to optimize count rate performance as well as avoid saturation.

Claims

1. A method of manufacturing a direct conversion detector for radiographic imaging, the method comprising the steps of:

providing multiple layers of semiconductor material designed to directly convert x-rays to electrical signals;

affixing an electrically conductive film layer to at least an x-ray penetration surface of each layer of semiconductor material; and

arranging the multiple layers of semiconductor material in a stack such that each layer is in contact with at least two electrically conductive film layers.

2. The method of claim 1 wherein the step of affixing includes the step of metallizing the at least an x-ray penetration surface of each layer of semiconductor material.

3. The method of claim 1 wherein the step of providing includes the step of growing each layer of semiconductor material from a CZT bulk.

4. The method of claim 3 wherein the step of growing includes utilizing molecular beam epitaxy to grow each CZT layer.

5. The method of claim 1 further comprising the step of affixing an electrically conductive film on an x-ray penetration surface and an opposite surface of one layer of semiconductor material.

6. The method of claim 5 wherein the step of arranging the multiple layers in a stack includes the step of joining the multiple layers to one another such that the layer having two surfaces of electrically conductive film thereon is placed farthest from an x-ray source.

7. The method of claim 1 wherein the step of arranging includes the step of positioning the multiple layers with respect to one another such that each layer is in contact with an HV connection film layer and a signal collection film layer.

8. The method of claim 1 wherein the step of arranging includes the steps of:

forming at least one bore in each of the multiple layers along a common axis; and

metallize the at least one bore to join the multiple layers in the stack.

9. A direct conversion detector for radiographic imaging, the detector having multiple layers of semiconductor material and interstitial electrically conductive layers, and formed by:

depositing a metallized layer on at least an x-ray penetration surface of each of a plurality of semiconductor layers; and

stacking the plurality of semiconductor layers in an x-ray penetration direction such that each semiconductor layer is sandwiched between a pair of metallized layers.

10. The detector of claim 9 further formed by growing the plurality of semiconductor layers from CZT bulk.

11. The detector of claim 10 further formed by growing the plurality of semiconductor layers via molecular beam epitaxy.

12. The detector of claim 9 further formed by etching a hole through the plurality of semiconductor layers and filling the hole with a joining compound to secure the plurality of semiconductor layers to one another in a single stacked arrangement.

13. The detector of claim 9 configured to directly convert x-rays into electrical signals that may be processed into a single image that provides anatomical detail and tissue characterization.

14. The detector of claim 9 having at least three semiconductor layers.

15. The detector of claim 9 further formed by arranging the plurality of semiconductor layers in pairs having a common signal collection electrode.

16. A CT detector fabrication process comprising:

a metallization stage whereupon a metallized layer is affixed to each of a plurality of CZT substrates, each CZT substrate designed to convert x-rays directly to electrical signals;

an arrangement stage whereupon the plurality of CZT substrates is arranged to form a CZT detector stack with each CZT substrate sandwiched between a pair of metallized layers; and

a composite stage whereupon the plurality of CZT substrates is connected to one another to form a singular composite structure.

17. The CT detector fabrication process of claim 16 further comprising a CZT substrate fabrication stage whereupon each CZT substrate is grown by molecular beam epitaxy.

18. The CT detector fabrication process of claim 16 wherein the composite stage includes etching a hole through the CZT detector stack and filling the hole with a joining metal.

19. The CT detector fabrication process of claim 16 wherein the arrangement stage includes positioning the plurality of CZT substrates such that each CZT substrate is connected to an anode layer and a cathode layer.

20. The CT detector fabrication process of claim 19 wherein each anode layer is disposed to receive signals from two CZT substrates.