Electronic gain cell based charge sensor

• US 6,953,958 B2
• Filed: 03/19/2003
• Issued: 10/11/2005
• Est. Priority Date: 03/19/2002
• Status: Expired due to Term

• Current Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Original Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Inventors: Tiwari, Sandip, Baxter, Gregory T.
• Primary Examiner(s): WILSON, CHRISTIAN D
• Application Number:
  US10/393,515
• Publication Number:
  US 20030231531A1
• Time in Patent Office: 937 Days
• Field of Search: 257/252, 257/253, 257/410, 257/414, 438/49
• US Class Current: 257/253
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 11/54 using elements simulating biological cells, e.g. neuron
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/02 using elements whose operation depends upon chemical change G11C13/0009 takes precedence
• CPC Class Codes: G11C 2216/08 Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A gated metal oxide semiconductor field effect transistor (MOSFET) gain cell is formed with a flow channel for molecule flow. The flow channel is formed under the gate, and between a source and drain of the transistor. The molecule flow modulates a gain of the transistor. Current flowing between the source and drain is representative of charges on the molecules flowing through the flow channel. A plurality of individually addressable gain cells are coupled between chambers containing samples to measure charges on molecules in the samples passing through the gain cells.

Claims

1. A gain cell for detecting molecular charges, the cell comprising:

a substrate;

a drain and source formed on the substrate;

a gate formed at least partially between the drain and source; and

a flow channel formed proximate the gate.

2. The gain cell of claim 1 wherein the gain cell comprises a gated metal oxide semiconductor field effect transistor.

3. The gain cell of claim 2 wherein the flow channel is formed between the gate and an electron channel of the transistor.

4. The gain cell of claim 3 wherein the flow channel is approximately 5-20 nanometers long and approximately 1-10 nanometers in cross section.

5. The gain cell of claim 4 wherein the gain cell detects charges from molecular species moving through the flow channel that are approximately sub 10 nanometers in size.

6. The gain cell of claim 1 wherein the gain cell comprises a thin-silicon channel transistor.

7. The gain cell of claim 6 wherein the flow channel is formed beneath the thin-silicon channel.

8. The gain cell of claim 7 wherein the flow channel is approximately 5 nanometers and larger in length and approximately 40-400 nanometers in cross section.

9. The gain cell of claim 8 wherein the gain cell detects charges from molecular species moving through the flow channel that are larger than approximately 10 nanometers in size.