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Low dielectric constant STI with SOI devices

  • US 6,953,983 B2
  • Filed: 12/08/2003
  • Issued: 10/11/2005
  • Est. Priority Date: 02/14/2000
  • Status: Expired due to Term
First Claim
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1. An integrated circuit device formed, comprising:

  • a substrate, including;

    a dielectric layer including an air gap for location at least partially beneath an active region;

    a semiconductor layer formed over the dielectric layer;

    a first active region formed in the semiconductor layer;

    a second active region formed in the semiconductor layer;

    a trench formed in the substrate and interposed between the first active region and the second active region; and

    wherein the trench contains cells of gaseous components and extends at least partially into a level of the dielectric layer of the substrate.

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