Silicon-on-sapphire display with wireless interconnections and method of fabricating same
First Claim
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1. A liquid crystal display, comprising:
- a sapphire substrate having a first crystal lattice structure;
a single crystal silicon structure disposed on said sapphire substrate to create a silicon-on-sapphire structure,wherein said crystal silicon structure has a thickness no greater than about 100 nanometers; and
wherein said crystal silicon structure has a second crystal lattice structure oriented by said first crystal lattice structure;
a plurality of liquid crystal capacitors disposed on said silicon-on-sapphire structure;
integrated self-aligned circuitry formed from said crystal silicon structure for modulating said liquid crystal capacitors responsive to an input control signal; and
a receiver disposed on said silicon-on-sapphire structure for receiving electromagnetic radiation and for generating said input control signal responsive to said received electromagnetic radiation.
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Abstract
A liquid crystal display includes: a) a sapphire substrate; b) a single crystal silicon structure disposed on the sapphire substrate to create a silicon-on-sapphire structure; c) a plurality of liquid crystal capacitors disposed on the silicon-on-sapphire structure; d) integrated self-aligned circuitry formed from the crystal silicon structure, where the circuitry modulates the liquid crystal capacitors in response to an input control signal; and e) a receiver disposed on the silicon-on-sapphire structure for receiving electromagnetic radiation and generating the input control signal responsive to the received electromagnetic radiation.
69 Citations
20 Claims
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1. A liquid crystal display, comprising:
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a sapphire substrate having a first crystal lattice structure; a single crystal silicon structure disposed on said sapphire substrate to create a silicon-on-sapphire structure, wherein said crystal silicon structure has a thickness no greater than about 100 nanometers; and wherein said crystal silicon structure has a second crystal lattice structure oriented by said first crystal lattice structure; a plurality of liquid crystal capacitors disposed on said silicon-on-sapphire structure; integrated self-aligned circuitry formed from said crystal silicon structure for modulating said liquid crystal capacitors responsive to an input control signal; and a receiver disposed on said silicon-on-sapphire structure for receiving electromagnetic radiation and for generating said input control signal responsive to said received electromagnetic radiation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of fabricating a monolithically integrated crystal array display and control circuitry on a silicon-on-sapphire structure, comprising the steps of:
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(a) affixing a single crystal silicon structure to a sapphire substrate having a first crystal lattice structure to create a silicon-on-sapphire structure, wherein said crystal silicon structure has a thickness no greater than about 100 nanometers and a second crystal lattice structure oriented by said first crystal lattice structure; (b) ion implanting said single crystal silicon structure with a species selected from the group consisting of;
silicon ions, tin ions, germanium ions, and carbon ions to create an ion-implanted silicon layer;(c) annealing said silicon-on-sapphire structure; (d) oxidizing said ion-implanted silicon layer to form a silicon dioxide layer from a portion of said silicon layer so that a thinned, ion-implanted silicon layer remains; (e) removing said silicon dioxide layer to expose said thinned ion-implanted silicon layer; (f) fabricating transistors wherein each of said transistors is formed by patterning said thinned ion-implanted silicon layer to create a patterned silicon layer; (g) growing a gate oxide on said patterned silicon layer; (h) forming a polysilicon layer over said silicon-on-sapphire structure; (i) doping said polysilicon layer; (j) patterning said polysilicon layer and said gate oxide to form a gate region and to expose selected regions of said thinned, ion-implanted silicon layer; (k) ion-implanting said selected regions of said silicon layer to create source and drain regions in said silicon layer that are self-aligned with said gate region; (l) fabricating electrical contacts that are electrically connected to said transistors; (m) monolithically fabricating a receiver operably coupled to said transistors for receiving electromagnetic radiation; and (n) fabricating liquid crystal capacitors on said silicon-on-sapphire structure that are electrically connected to said transistors by said electrical contacts. - View Dependent Claims (14)
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15. A liquid crystal display system, comprising:
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a liquid crystal display, comprising; a plurality of liquid crystal capacitors disposed on a first structure of silicon-on-sapphire; integrated self-aligned circuitry disposed on said first structure for modulating said liquid crystal capacitors responsive to an input control signal; and a receiver disposed on said first structure for receiving electromagnetic radiation and for generating said input control signal responsive to said received electromagnetic radiation; and an off-chip circuit disposed on a second structure for generating said electromagnetic radiation. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification
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Current Assigneethe united states of america as represented by the secretary of the navy
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Original Assigneethe united states of america as represented by the secretary of the navy
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InventorsOfford, Bruce W., Russell, Stephen D., Shimabukuro, Randy L.
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Primary Examiner(s)Kim, Robert H.
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Assistant Examiner(s)Akkapeddi, Prasad R.
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Application NumberUS10/911,768Time in Patent Office439 DaysField of Search349/38US Class Current349/38CPC Class CodesG02F 1/13454 Drivers integrated on the a...
