Concentric proximity processing head

• US 6,954,993 B1
• Filed: 06/30/2004
• Issued: 10/18/2005
• Est. Priority Date: 09/30/2002
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Smith, Michael G. R., Ravkin, Michael, O'Donnell, Robert J.
• Primary Examiner(s): GRAVINI, STEPHEN MICHAEL
• Application Number:
  US10/883,301
• Publication Number:
  US 20050217137A1
• Time in Patent Office: 475 Days
• Field of Search: 344/06, 344/07, 34/58, 34/92, 134/2, 134/31, 156/345.23, 118/52
• US Class Current: 34/407
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/6704 for wet cleaning or washing
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67063 for etching
• CPC Class Codes: H01L 21/67075 for wet etching
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles

Abstract

In one of the many embodiments, a method for processing a substrate is disclosed which includes generating a first fluid meniscus and a second fluid meniscus at least partially surrounding the first fluid meniscus wherein the first fluid meniscus and the second fluid meniscus are generated on a surface of the substrate.

Claims

1. A method for processing a substrate using a proximity head, comprising:

generating a first fluid meniscus on a surface of the substrate, the first fluid meniscus being generated by applying a first fluid to a surface of the substrate and by removing the first fluid from the surface of the substrate just as the first fluid is applied; and

generating a second fluid meniscus in contact with and at least partially surrounding the first fluid meniscus on the surface of the substrate, the second fluid meniscus being generated by applying a second fluid to a portion of the surface of the substrate at least partially surrounding the surface of the substrate in contact with the first fluid meniscus and by removing the second fluid from the portion of the surface of the substrate just as the second fluid is applied;

wherein during a substrate processing operation the first fluid meniscus and the second fluid meniscus being defined between a processing surface of the proximity head and the surface of the substrate.

2. A method for processing a substrate as recited in claim 1, further comprising:

processing the surface of the substrate with the first fluid meniscus, and

processing the surface of substrate with the second fluid meniscus.

3. A method for processing a substrate as recited in claim 2, wherein processing the surface of the substrate with the first fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation.

4. A method for processing a substrate as recited in claim 2, wherein processing the surface of the substrate with the second fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

5. A method for processing a substrate as recited in claim 1, wherein generating the first fluid meniscus includes applying the first fluid to the surface of the substrate through a first fluid inlet and removing the first fluid from the surface of the substrate through a first fluid outlet.

6. A method for processing a substrate as recited in claim 5, wherein generating the second fluid meniscus includes applying the second fluid to the surface of the substrate through a second fluid inlet and removing the second fluid from the surface of the substrate through the first fluid outlet and a second fluid outlet and applying a third fluid through a third inlet.

7. A method for processing a substrate as recited in claim 5, wherein the first fluid is one of a lithographic fluid, an etching fluid, a plating fluid, a cleaning fluid, or a rinsing fluid.

8. A method for processing a substrate as recited in claim 6, wherein the second fluid is one of a lithographic fluid, an etching fluid, a plating fluid, a cleaning fluid, a drying fluid, or a rinsing fluid.

9. A method for processing a substrate as recited in claim 6, wherein the third fluid decreases a surface tension of the second fluid.

10. A method for processing a substrate as recited in claim 6, wherein the third fluid is an isopropyl alcohol vapor in nitrogen gas.

11. An apparatus for processing a substrate, comprising:

a proximity head capable of generating a first fluid meniscus on a substrate surface and capable of generating a second fluid meniscus on the substrate surface at least partially surrounding the first fluid meniscus, the proximity head capable of substantially maintaining an integrity of the second fluid meniscus when in contact with the first fluid meniscus, the first fluid meniscus and the second fluid meniscus being defined between a processing surface of a proximity head and the substrate surface during a substrate processing operation.

12. An apparatus for processing a substrate as recited in claim 11, wherein the proximity head includes,

a first set of conduits defined within the proximity head capable of generating the first fluid meniscus, and

a second set of conduits defined within the proximity head capable of generating the second fluid meniscus, the second set of conduits at least partially surrounding the first set of conduits.

13. An apparatus for processing a substrate as recited in claim 12, wherein the first set of conduits include,

at least one inlet for applying a first fluid to the surface of the wafer, and

at least one outlet for removing at least the first fluid from the surface of the wafer.

14. An apparatus for processing a substrate as recited in claim 13, wherein the second set of conduits include,

at least one inlet for applying a second fluid to the surface of the wafer, and

at least one outlet for removing the second fluid from the surface of the wafer,

wherein the at least one outlet for removing the first fluid from the surface of the wafer also removes at least a portion of the second fluid.

15. An apparatus for processing a substrate as recited in claim 14, wherein the second set of conduits further includes,

at least one inlet for applying a third fluid to the surface of the wafer.

16. An apparatus for processing a substrate as recited in claim 11, wherein the first fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation.

17. An apparatus for processing a substrate as recited in claim 11, wherein the second fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

18. A method for processing a substrate as recited in claim 15, wherein the third fluid decreases a surface tension of the second fluid.

19. An apparatus for processing a substrate, comprising:

a proximity head capable of generating a first fluid meniscus on a surface of the substrate and capable of generating a second fluid meniscus on the surface of the substrate at least partially surrounding the first fluid meniscus, the proximity head including,

at least one first inlet defined in a processing surface of the proximity head configured to apply a first fluid to the surface of the wafer through the proximity head;

at least one first outlet defined in the processing surface of the proximity head configured to remove the first fluid and at least a portion of a second fluid from the surface of the wafer through the proximity head;

at least one second inlet defined in the processing surface of the proximity head configured to apply the second fluid to the surface of the wafer though the proximity head; and

at least one second outlet defined in the processing surface of the proximity head configured to remove at least a portion of the second fluid from the surface of the wafer through the proximity head; and

wherein the at least one second inlet and the at least one second outlet at least partially surrounds the at least one first outlet and the at least one first inlet on the processing surface of the proximity head, the first fluid meniscus and the second fluid meniscus being defined between the processing surface and the surface of the substrate during a substrate processing operation.

20. An apparatus for processing a substrate as recited in claim 19, wherein

the proximity head further includes,

at least one third inlet defined in the processing surface of the proximity head configured to apply a third fluid to the surface of the wafer.

21. An apparatus for processing a substrate as recited in claim 19, wherein the first fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation.

22. An apparatus for processing a substrate as recited in claim 19, wherein the second fluid meniscus is capable of executing one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

23. A method for processing a substrate as recited in claim 20, wherein the third fluid decreases a surface tension of the second fluid.