Domain epitaxy for thin film growth

• US 6,955,985 B2
• Filed: 06/27/2003
• Issued: 10/18/2005
• Est. Priority Date: 06/28/2002
• Status: Active Grant

• Current Assignee: Kopin Corporation
• Original Assignee: Kopin Corporation
• Inventors: Narayan, Jagdish
• Primary Examiner(s): Nhu, David
• Application Number:
  US10/608,780
• Publication Number:
  US 20040072381A1
• Time in Patent Office: 844 Days
• Field of Search: 438/681, 438/680, 438/660, 438/663, 438/743, 438/744, 438/752, 438/753, 438/754, 438/756, 438/757, 438/933, 438/954
• US Class Current: 438/681
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/105 by irradiation or electric discharge
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/40 AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02499 Monolayers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02617 Deposition types

Abstract

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T_growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T_anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h_c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Claims

1. A method of forming an epitaxial film on a substrate, comprising the steps of:

(a) growing an initial layer of a film on a substrate at a temperature T_growth, said initial layer having a thickness h;

(b) annealing the initial layer of the film at a temperature T_anneal, thereby substantially completely relaxing the initial layer.

2. The method of claim 1 further including growing additional layers of the film over the initial layer subsequent to annealing.

3. The method of claim 1 wherein said thickness h of the initial layer of the film is greater than a critical thickness h_c.

4. The method of claim 1 wherein h between about 1 and about 5 monolayers.

5. The method of claim 1 wherein T_growth is about equal to T_anneal.

6. The method of claim 1 wherein T_growth is less than T_anneal.

7. The method of claim 1 wherein growth of the initial layer includes two-dimensional growth.

8. The method of claim 1 wherein the substrate includes Si(100) and the film includes TiN.

9. The method of claim 1 wherein the substrate includes Si(111) and the film includes at least one III-nitride selected from the group consisting of AlN, GaInN, and AlGaInN.

10. The method of claim 9 wherein the film includes AlN.

11. The method of claim 1 wherein the substrate includes Al₂O₃(0001) and wherein the film includes at least one member selected from the group consisting of ZnO, AlN, GaInN, and AlGaInN.

12. The method of claim 11 wherein the film includes ZnO.

13. The method of claim 2 further including the step of growing a layer of the film that includes at least one amorphous area.

14. The method of claim 13 wherein at least one amorphous area includes Si.

15. The method of claim 14 wherein at least one area of amorphous growth includes silicon nitride or silicon oxide.