Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
First Claim
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1. A method of forming a multilayer structure comprising a barrier layer, an adhesion layer and a copper seed layer for an integrated circuit comprising:
- depositing a metal nitride diffusion barrier layer comprising at least one refractory metal over a dielectric layer of the integrated circuit by an atomic layer deposition type process; and
depositing over the diffusion barrier layer a graded metal alloy layer comprising copper and the refractory metal of the diffusion barrier layer by plasma enhanced atomic layer deposition, wherein the deposition of the graded metal alloy layer begins with deposition of the metal of the diffusion barrier layer and is finished with deposition of metallic copper.
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Abstract
A process produces a layer of material which functions as a copper barrier layer, adhesion layer and a copper seed layer in a device of an integrated circuit, particularly in damascene or dual damascene structures. The method includes a step of depositing a diffusion barrier layer over a dielectric, a step of depositing a layer of graded metal alloy of two or more metals, and a step of depositing a copper seed layer, which step is essentially a part of the step of depositing the alloy layer.
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Citations
24 Claims
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1. A method of forming a multilayer structure comprising a barrier layer, an adhesion layer and a copper seed layer for an integrated circuit comprising:
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depositing a metal nitride diffusion barrier layer comprising at least one refractory metal over a dielectric layer of the integrated circuit by an atomic layer deposition type process; and
depositing over the diffusion barrier layer a graded metal alloy layer comprising copper and the refractory metal of the diffusion barrier layer by plasma enhanced atomic layer deposition, wherein the deposition of the graded metal alloy layer begins with deposition of the metal of the diffusion barrier layer and is finished with deposition of metallic copper. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a multilayer structure comprising a barrier layer, an adhesion layer and a copper seed layer for an integrated circuit comprising:
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depositing a diffusion barrier layer comprising at least one refractory metal over a dielectric layer of the integrated circuit by an atomic layer deposition type process; and
depositing over the diffusion barrier layer a graded metal alloy layer comprising copper and the refractory metal of the diffusion barrier layer by plasma enhanced atomic layer deposition, wherein the deposition of the graded metal alloy layer begins with deposition of the metal of the diffusion barrier layer and is finished with deposition of metallic copper, wherein the process for producing the graded metal alloy layer comprises steps wherein a fluoride of the refractory metal comprising a fluoride ligand is pulsed over a substrate and thereafter a copper precursor is pulsed over the substrate to form a layer that contains the refractory metal and copper fluoride, and the fluoride ligand and any other ligands attached to the metal atoms on the substrate are stripped away with hydrogen plasma to provide a metal alloy layer of the refractory metal and copper. - View Dependent Claims (12)
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13. A method of forming a multilayer structure comprising a barrier layer, an adhesion layer and a copper seed layer for an integrated circuit comprising:
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depositing a diffusion barrier layer comprising at least one refractory metal over a dielectric layer of the integrated circuit by an atomic layer deposition type process; and
depositing over the diffusion barrier layer a graded metal alloy layer comprising copper and the refractory metal of the diffusion barrier layer by plasma enhanced atomic layer deposition, wherein the process for producing the graded metal alloy layer comprises copper deposition cycles wherein a stable solid phase of copper fluoride (CuF2) is formed over the substrate and the fluoride ligand is stripped away with hydrogen plasma to provide no more than one atomic layer of copper metal over the substrate. - View Dependent Claims (14, 15)
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16. A method of forming a graded metal alloy layer over a diffusion barrier in an integrated circuit comprising:
depositing a graded metal alloy layer consisting essentially of metals by atomic layer deposition (ALD) on a substrate, wherein the deposition of the graded metal alloy layer begins with deposition of a first metal and is finished with deposition of a second metal. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. A multilayer structure forming a diffusion barrier for copper and an adhesion layer and a seed layer for a metallization layer of an integrated circuit comprising:
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a metal nitride diffusion barrier layer comprising a refractory metal deposited over a dielectric layer of the integrated circuit; and
a graded metal alloy layer of copper and said refractory metal over the diffusion barrier layer wherein the copper concentration of the graded metal alloy layer is zero close to a bottom of the graded metal alloy layer and the graded metal alloy layer is covered with a layer of metallic copper. - View Dependent Claims (24)
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Specification